A Critical Analysis and Assessment of High Power Switches

Concepts For Electron-Beam And Optical Control Of Bulk Semiconductor Switches

“…The photoionization cross sections of holes and electrons for the Cu -level were measured by Kullendorf et al 24 They are shown in Figures 6a and 6b for InP and in Figures 7a and 7b For GaAs:CuB,, they are 3 * 10-14cm2 at 300 K°(decreasing slowly with * increasing temperature) and 8 10 -21 cm2 at 250 °K respectively (exhibiting a weak temperature dependance).…”

“…For GaAs the electron mobility is 8000 cm2 /Vs and the hole mobility is Above this threshold the electron mobility is approaching the value 180 cm2 /Vs due to the Ridley -Watkins -Hilsum mechanism.13,140perating the semiconductor switch at a field intensity just below this threshold results in a switch current density of Js = 1.7 .n 103 * Jb1/2 (8) SPIE Vol. 735 Pulse Power for Lasers (1987) / 87…”