2014
DOI: 10.1016/j.tsf.2014.09.053
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A critical comparison between XRD and FIB residual stress measurement techniques in thin films

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Cited by 65 publications
(34 citation statements)
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“…8(b). Fine-scale Pt patterns have been used extensively in the literature for DIC on SEM images [39,40]. Here, however, the Pt pattern has been optimized (in terms of speckle size and contrast) to yield the maximum displacement resolution for DIC applied to optical profilometry images, which explains the choice for a much coarser pattern with smooth edges of the speckles.…”
Section: Force and Displacement Measurement And Stress-strain Curvementioning
confidence: 99%
“…8(b). Fine-scale Pt patterns have been used extensively in the literature for DIC on SEM images [39,40]. Here, however, the Pt pattern has been optimized (in terms of speckle size and contrast) to yield the maximum displacement resolution for DIC applied to optical profilometry images, which explains the choice for a much coarser pattern with smooth edges of the speckles.…”
Section: Force and Displacement Measurement And Stress-strain Curvementioning
confidence: 99%
“…It is a great challenge to conduct a reliable modeling and measurement for the residual stress of micro and nanostructured thin films. In order to realize the residual stress in a manner that considers the mechanical anisotropy and the preferred orientation of the materials, the detailed understanding of strain function corresponding to the depth lattice is required when analyzing depth profiles of residual strain [1].…”
Section: Introductionmentioning
confidence: 99%
“…This situation could generate localization distortions in the displacement fields obtained from the images analyzed by DIC [17]. Despite many research studies on the DIC of SEM [1,2,4,[13][14][15][16], the computational accuracy and the speed of advancement are always the major subjects. Prior to this, a study was performed on the validation methodology of DIC for SEM to reduce errors and use it for strain and surface deformation measurement of Complementary Metal-Oxide-Semiconductor Integrated Circuit (CMOS IC) samples.…”
mentioning
confidence: 99%
“…Many of researchers focused their search on how to measure the residual stresses, distortions and concluded that the measurements techniques of residual stresses divided to destructive technique such as hole drilling method [3,4] and nondestructive techniques including neutron diffraction, magneto-elastic , X-Ray [5][6][7] and analytical method. However, all of these methods are very complicated and costly.…”
Section: Introductionmentioning
confidence: 99%