A Critical Review on Reliability and Short Circuit Robustness of Silicon Carbide Power MOSFETs

Sreejith, S.; Ajayan, J.; Devasenapati, S. Babu; Sivasankari, B.; Tayal, Shubham

doi:10.1007/s12633-022-02039-1

Cited by 6 publications

(2 citation statements)

References 136 publications

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“…SiC MOSFETs are meant to replace Si IGBTs, whose τ SC is around 10µs. Since 2013, this mark has been reached [55], but not in a systematic way. To improve performance, the addition of a source resistance to the stressed device proved to be beneficial, if properly tuned to not affect ON-state and switching performance.…”

Section: F Sc Robustness Of Sic Mosfetsmentioning

confidence: 99%

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Buffolo,

Favero,

Marcuzzi

et al. 2024

IEEE Trans. Electron Devices

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We present a comprehensive review and outlook of silicon carbide (SiC) and gallium nitride (GaN) transistors available on the market for current and next-generation power electronics. Material properties and structural differences among GaN and SiC devices are first discussed. Based on the analysis of different commercially available GaN and SiC power transistors, we describe the state-of-the-art of these technologies, highlighting the preferential power conversion topologies and the key characteristics of each technological platform. Current and future fields of application for GaN and SiC devices are also reviewed. The article also reports on the main reliability aspects related to both technologies. For GaN HEMTs, threshold voltage stability, dynamic ON-resistance, and breakdown limitation are described, whereas for SiC MOSFETs the analysis also focuses on gate oxide failure and short-circuit (SC) robustness. Finally, we give an overview on the perspective of such materials in different fields of interest. An indication of possible future improvements and developments for both technologies is drawn. The requirements for hybrid converters, along with Manuscript

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Section: F Sc Robustness Of Sic Mosfetsmentioning

confidence: 99%

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Buffolo,

Favero,

Marcuzzi

et al. 2024

IEEE Trans. Electron Devices

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“…Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a silicon carbide-based metal-oxide semiconductor field-effect transistor. It has the advantages of high voltage, high frequency, high temperature, high power density, low on-resistance, and low switching loss [2]. Due to these benefits, SiC MOSFET has a wide range of potential applications in the high-speed, high-power, and high-temperature areas.…”

Section: Introductionmentioning

confidence: 99%

Recent Advances in Short Circuit Protection Methods for SiC MOSFET

Gao

2023

MATEC Web Conf.

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Due to its high efficiency, low switching losses, and high temperature stability, Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has been widely used in various fields. Therefore, the protection of SIC MOSFET devices is crucial. The significance of this research topic lies in comparing the existing short-circuit protection methods and technologies for SiC MOSFET, pointing out the advantages and shortcomings of each method, and providing suggestions. Firstly, the principles and impacts of HSF and FUL in short-circuit faults are introduced. Secondly, this article elaborates on shortcircuit protection methods from two aspects: hardware protection and software protection, concentrating mostly on recently researched hardware protection methods. Finally, a comparison between the two protection methods is made, and potential improvement solutions are proposed. Based on the research conducted, the author believes that the current hardware protection method based on current detection is the optimal solution for SiC MOSFET short-circuit protection. Future research can be focused on integrating other solutions for further optimization on this basis.

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