A current-controlled electrically switched memory state in silver and copper-TCNQF4 radical-ion salts

Potember, Richard S.; Poehler, T. O.; Rappa, Angela; Cowan, Dwaine O.; Bloch, A. N.

doi:10.1016/0379-6779(82)90007-8

Cited by 67 publications

(44 citation statements)

References 13 publications

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“…Illustrated in Figure b is the background corrected Raman spectra (background corrected using an smoothing free algorithm) obtained from all the GR samples as Raman spectroscopy has the ability to differentiate between neutral (TCNQF 4 0 ) and reduced (TCNQF 4 − ) species . Signatures obtained from TCNQF 4 shows peaks at 2226 cm −1 (C

\equiv

N), 1665 cm −1 (C

=

C ring) and 1460 cm −1 (C–CN stretching), which are characteristic of the neutral state ,. The shift in the C

\equiv

N (from 2226 to 2200 cm −1 ) and C

=

C ring vibrations (from 1665 to 1640 cm −1 ) suggests that the TCNQF 4 is present in the reduced state following the formation of CuTCNQF 4 ,.…”

Section: Resultsmentioning

confidence: 99%

“…2,3,5,6‐tetrafluoro‐7,7,8,8‐tetracyanoquinodimethane (TCNQF 4 ) due to its superior optical, electrical, and magnetic properties in comparison to TCNQ‐based charge transfer complexes ,. Although the fluorinated analogues were primarily explored for field emission and switching devices, recent work by our group and others have shown the potential of MTCNQF 4 (where M=Cu or Ag) to be used as catalysts for electron transfer reactions between ferricyanide and thiosulfate, as well as for the conversion of Cr 6+ to Cr 3+ reduction in the presence of methanol as electron donor ,. To date, much of the work on TCNQ and TCNQF 4 ‐based materials has focused on exploring the applicability of the pristine MTCNQ complex.…”

Section: Introductionmentioning

confidence: 99%

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Galvanic Replacement of Semiconducting CuTCNQF ₄ with Ag ⁺ Ions to Enhance Electron Transfer Reaction

Ramanathan

Kumar

et al. 2017

ChemistrySelect

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Inspired by the electroless galvanic replacement (GR) process where a spontaneous redox reaction occurs between two metal species primarily due to the difference in the standard electrode potential of the metal/metal ion couples, a facile strategy is developed to fabricate hybrid materials of metal organic semiconducting materials. The GR of CuTCNQF4, a metal organic charge transfer complex with Ag+ ion results in the formation of hybrids, wherein at low Ag+ ion concentrations, a hybrid of Ag nanoparticles decorated on the surface of CuTCNQF4 is obtained. In contrast, high Ag+ ion concentrations show the formation of AgTCNQF4/CuTCNQF4 hybrids with Ag nanoparticle decoration on the surface of the CuTCNQF4 structures. While the GR reaction results in different hybrids depending on the concentration of Ag+ ions and the availability of underlying Cu foil, we observe that the resulting hybrids have an influence on the catalytic and electrical properties. The outcomes presented in this work present a strong foundation for fabricating hybrid materials encompassing metal organic charge transfer complexes and exploring their properties for new biological, catalytic and electronic applications.

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\equiv

N), 1665 cm −1 (C

=

C ring) and 1460 cm −1 (C–CN stretching), which are characteristic of the neutral state ,. The shift in the C

\equiv

N (from 2226 to 2200 cm −1 ) and C

=

C ring vibrations (from 1665 to 1640 cm −1 ) suggests that the TCNQF 4 is present in the reduced state following the formation of CuTCNQF 4 ,.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Galvanic Replacement of Semiconducting CuTCNQF ₄ with Ag ⁺ Ions to Enhance Electron Transfer Reaction

Ramanathan

Kumar

et al. 2017

ChemistrySelect

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“…They are included in DNA, RNA, in content of vitamins of B group, antibiotics, vessel expanding medicines, correcting heart action, stimulating metabolic processes. [3][4][5][6][7][8] Some of CT complexes were used as current controlled electrically, switched memory, 9 conducting single crystals in the microcircuitry of electronic devices, 10 components of solar cells 11 and semiconductors 12 making use of their high-electrical conductivity. 13,14 Recently, a lot of interest in molecular CT complexes has stemmed from their technological potential.…”

Section: Introductionmentioning

confidence: 99%

Charge Transfer Complexes of Some Heterocyclic Aromatic Amines with π‐Organic Acceptors in Polar Solvents

Abdalla

El-Haty

Adam

et al. 2013

J Chinese Chemical Soc

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A conductometric titration technique has been used to investigate the electron transfer activity of CT molecular complexes formed by arylazopyrimidine and naphthylazopyrimidine derivatives as donors and the organic p-acceptors p-nitroaniline, p-chloroaniline, p-bromoaniline, anthraquinone, picric acid, anitroso-b-naphthol, p-hydroxybenzaldehyde and maleic anhydride. The study was performed at different degree of temperature and in three different polar solvents namely N,N-dimethylformamide (DMF), acetonitrile (ACN) and dimethylsulfoxide (DMSO). The stoichiometric ratios of these complexes were found to be 1:1. The dissociation constant (as M ) values of the formed complexes have been calculated, and the effects of solvents as well as types of electron donors on their conductance s p -values have been examined.

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“…Conductivity-modulated memory designs experienced a major focus of investigation. Conductivitymodulated memory technologies include magnetoresistive randomaccess memory ͑RAM͒, 1,2 programmable metallization cell memory or conductive-bridging RAM, 3,4 and chalcogenide-based phasechange memory, 5 as well as organic memory concepts, 6,7 which employ a layer of organic or organometallic material to achieve reversible, nonvolatile conductivity switching.One of the most promising organic memory technologies incorporates the charge-transfer complex coppertetracyanoquinodimethane ͑CuTCNQ͒ as the active layer and was first described by Potember et al [8][9][10] Charge-transfer ͑CT͒ complexes consist of an electron donor and an electron acceptor. In the case of CuTCNQ, the TCNQ molecule acts as the electron acceptor, while each copper atom is acting as an electron donor.…”

mentioning

confidence: 99%

Self-Aligned Growth of Organometallic Layers for Nonvolatile Memories: Comparison of Liquid-Phase and Vapor-Phase Deposition

Erlbacher

Jank

Ryssel

et al. 2008

J. Electrochem. Soc.

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Deposition methods for the self-aligned growth of organometallic charge-transfer complexes for use as a conductivity-modulated, nonvolatile switching layer are presented. First, a deposition from liquid phase is investigated and a model for film growth is derived. Then, a deposition technique for charge-transfer complexes, namely selective organic vapor-phase deposition, is introduced which excels in selectivity and homogeneity. In particular, silicon dioxide layers exposed to the precursor molecules during processing remain completely uncovered, whereas copper pads in contact holes are rapidly filled with the desired layer of the charge-transfer complex. Then, both deposition methods are compared regarding reproducibility, selectivity, homogeneity, and the ability to selectively grow thin films in small structures with diameters below 200 nm. Finally, electrical switching properties are investigated and the switching mechanism for the present charge-transfer complex is discussed.As prospective successors for flash or dynamic random-access memory, several new concepts for data storage have been intensively studied in recent years. Conductivity-modulated memory designs experienced a major focus of investigation. Conductivitymodulated memory technologies include magnetoresistive randomaccess memory ͑RAM͒, 1,2 programmable metallization cell memory or conductive-bridging RAM, 3,4 and chalcogenide-based phasechange memory, 5 as well as organic memory concepts, 6,7 which employ a layer of organic or organometallic material to achieve reversible, nonvolatile conductivity switching.One of the most promising organic memory technologies incorporates the charge-transfer complex coppertetracyanoquinodimethane ͑CuTCNQ͒ as the active layer and was first described by Potember et al. [8][9][10] Charge-transfer ͑CT͒ complexes consist of an electron donor and an electron acceptor. In the case of CuTCNQ, the TCNQ molecule acts as the electron acceptor, while each copper atom is acting as an electron donor. However, a number of other metals and several electron-rich organic molecules have been investigated as feasible electron donors. 11,12 A characteristic property of a CT complex is the quantity of electron transfer, i.e., the extent to which donor electrons are transferred toward the electron acceptor. Due to a typically limited electron transfer, the bonds of a CT complex are weaker than covalent and even hydrogen bonds, but they are usually strong enough to build crystalline structure. 13 Resistance switching in thin films of CT complexes has been obtained by voltage pulses of different amplitudes and polarity, and switching times below 25 ns have been achieved. 8 Although the theory of operation for this kind of organometallic memory is not yet fully understood, it is assumed that the amount of electron transfer between the acceptor and donor, which determines the conductivity of a CT complex, can be permanently modulated under an electric field. 14,15 The conductivity of a CT complex is initially low because the donor electr...

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A current-controlled electrically switched memory state in silver and copper-TCNQF4 radical-ion salts

Cited by 67 publications

References 13 publications

Galvanic Replacement of Semiconducting CuTCNQF ₄ with Ag ⁺ Ions to Enhance Electron Transfer Reaction

Galvanic Replacement of Semiconducting CuTCNQF ₄ with Ag ⁺ Ions to Enhance Electron Transfer Reaction

Charge Transfer Complexes of Some Heterocyclic Aromatic Amines with π‐Organic Acceptors in Polar Solvents

Self-Aligned Growth of Organometallic Layers for Nonvolatile Memories: Comparison of Liquid-Phase and Vapor-Phase Deposition

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A current-controlled electrically switched memory state in silver and copper-TCNQF4 radical-ion salts

Cited by 67 publications

References 13 publications

Galvanic Replacement of Semiconducting CuTCNQF 4 with Ag + Ions to Enhance Electron Transfer Reaction

Galvanic Replacement of Semiconducting CuTCNQF 4 with Ag + Ions to Enhance Electron Transfer Reaction

Charge Transfer Complexes of Some Heterocyclic Aromatic Amines with π‐Organic Acceptors in Polar Solvents

Self-Aligned Growth of Organometallic Layers for Nonvolatile Memories: Comparison of Liquid-Phase and Vapor-Phase Deposition

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Product

Resources

About

Galvanic Replacement of Semiconducting CuTCNQF ₄ with Ag ⁺ Ions to Enhance Electron Transfer Reaction

Galvanic Replacement of Semiconducting CuTCNQF ₄ with Ag ⁺ Ions to Enhance Electron Transfer Reaction