A Current Transport Mechanism on the Surface of Pd-SiO₂Mixture for Metal-Semiconductor-Metal GaAs Diodes

Abstract

This paper presents a current transport mechanism of Pd metal-semiconductor-metal (MSM) GaAs diodes with a Schottky contact material formed by intentionally mixing SiO2into a Pd metal. The Schottky emission process, where the thermionic emission both over the metal-semiconductor barrier and over the insulator-semiconductor barrier is considered on the carrier transport of a mixed contact of Pd and SiO2(MMO) MSM diodes, is analyzed. The image-force lowering is accounted for. In addition, with the applied voltage increased, the carrier recombination is thus considered. The simulation data are presented to explain the experimental results clearly.