A cylindrical probe in a flow of slowly moving collisional plasma

Kotelnikov, V. A.; Kotel’nikov, M. V.

doi:10.1134/s0018151x08030048

Cited by 5 publications

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“…The base pressure for all runs was in the order of 10 -3 Pa. The parameters of CZT precursor fabrication were as follows: Ar gas flow rate: 7 sccm, working pressure: 6.5 9 10 -2 Pa, substrate temperature: 220°C, copper 250 mg, zinc 140 mg, tin 268 mg (molar ratios: Cu/Zn/Sn = 2/1/1), one Mo evaporation boat heating current between 100 and 150 A (rate 10 A/ 3 min), ICP discharge power: 275, 325, 375 W (plasma density was about 3.5 9 10 9 /cm 3 , the electron temperature was about 3.4 eV) [15][16][17][18] for sample B, C, D and no ICP assisted for sample A. The evaporation time was about 20 min and the substrate was naturally cooled.…”

Section: Methodsmentioning

confidence: 99%

Properties of Cu2ZnSnS4 (CZTS) thin films prepared by plasma assisted co-evaporation

Chen

2015

J Mater Sci: Mater Electron

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In this work, Cu 2 ZnSnS 4 (CZTS) in thin film form has been prepared on soda-lime glass by sulfurization of Cu-Zn-Sn (CZT) metal precursors. Different from traditional methods, precursor films were synthesized using elemental Cu, Zn and Sn metal wire by inductively coupled plasma (ICP) assisted co-evaporation. The composition, microstructure and properties of CZTS thin films were investigated using energy dispersive X-ray spectrometers (EDS), X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-Vis spectrophotometer. SEM study showed that the grain size of the CZT and CZTS films prepared by ICP assisted were larger than that no plasma assisted, however, an increasing of discharge power resulted in the increase of grain number, the decrease of grain size and exhibiting denser morphology. XRD analysis indicated the plasma assisted could improve the properties of films crystallinity. EDS revealed loss of Zn in films by traditional method, especially in CZT films. The plasma assistive technology could alleviate the lack of Zn, moreover, the content of Zn increased with the increasing of plasma discharge power. The values measured by UVVis spectrophotometer obtained for the optical band gap energy of the films both were about 1.50 eV, which was not affected by plasma assisted.

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Section: Methodsmentioning

confidence: 99%

Properties of Cu2ZnSnS4 (CZTS) thin films prepared by plasma assisted co-evaporation

Chen

2015

J Mater Sci: Mater Electron

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The optimization functions of ICP discharge in preparation of Cu–Zn–Sn precursors and CZTS films by co-evaporation

Chen

et al. 2016

J. Semicond.

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Cu–Zn–Sn (CZT) precursors were successfully prepared on glass substrate with the introduction of the assistant technology ICP (inductively coupled plasma) based on the conventional co-evaporation process. The deposition was performed with the substrate temperature at 220 °C and the chamber pressure at 6.5 × 10−2 Pa. Argon plasma was investigated with a Langmuir probe. The plasma density and the electron temperature increased with the increasing of the discharge power. The impact of ICP discharge power on the structural and morphological properties of the CZT film were investigated with energy dispersive X-ray spectrometers (EDS), X-ray diffraction (XRD), and scanning electron microscopy (SEM). XRD and EDS were combined to investigate the structure of the film. The results show that Zn loss exists during the evaporation and the loss can be reduced by increasing the ICP discharge power. From the observation on the scanning electron microscope, the grain size becomes larger with argon plasma's assistance. The preparation of the Cu2ZnSnS4 (CZTS) film and the measured properties demonstrate that the ICP would optimize the growth of the film.

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Flat wall probe in dense plasma flow

Kotelnikov

Kotel’nikov

2017

High Temp

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A cylindrical probe in a flow of slowly moving collisional plasma

Cited by 5 publications

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Properties of Cu2ZnSnS4 (CZTS) thin films prepared by plasma assisted co-evaporation

Properties of Cu2ZnSnS4 (CZTS) thin films prepared by plasma assisted co-evaporation

The optimization functions of ICP discharge in preparation of Cu–Zn–Sn precursors and CZTS films by co-evaporation

Flat wall probe in dense plasma flow

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