A D-Band Rectangular Waveguide-to-Coplanar Waveguide Transition Using Metal Ridge

Dong, Yunfeng; Zhurbenko, Vitaliy; Hanberg, Peter Jesper; Johansen, Tom K.

doi:10.1109/mwsym.2019.8701099

Cited by 9 publications

(2 citation statements)

References 10 publications

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“…This process allows the layer thickness of the InP substrate to be reduced to a few μm, while still maintaining the mechanical robustness required for packaging. Since the dielectric constant of the Rohacell 71 HF substrate is very close to the dielectric constant of the air (ε r ≈ ε 0 = 1), its influence on the electrical performance of the proposed transitions is negligible [23]. Fig.…”

Section: Numerical Analysismentioning

confidence: 99%

Monolithically Integrated THz Photodiodes With CPW-to-WR3 E-Plane Transitions for Photodiodes Packages With WR3-Outputs

Makhlouf

Dulme

Grzeslo

et al. 2021

J. Lightwave Technol.

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An indium phosphide (InP)-based E-plane transition for monolithically integrating terahertz photodiodes with standard rectangular waveguide (WR)-outputs is presented for all standard WR-frequency bands from 0.22 THz to 2.2 THz, i.e., from WR3 to WR0.51. The integration concept comprises a modified uni-travelling carrier photodiode (MUTC-PD) chip, an E-plane transition and a stepped impedance low-pass filter (LPF), which are all monolithically integrated on an InP substrate. The E-plane transition converts the quasi-TEM coplanar waveguide (CPW) mode of the MUTC-PD output to the dominant TE10 mode of the WR. To our knowledge, this is the first frequency-scalable monolithic integration concept that enables packaging of photodiodes with standard WR-outputs up to 2.2 THz. The recommended thickness of the InP substrate and the proposed E-plane transitions' design parameters are investigated by numerical analysis to achieve minimum insertion loss (IL) and a wide operational bandwidth (BW). The presented optimized transitions exhibit a maximum IL of 1.4 dB, a return loss (RL) better than 10 dB and a minimum 1 dB IL BW of 92.23% for all WR-bands up to 2.2 THz. To prove the proposed monolithic integration concept, a MUTC-PD is integrated with a CPW-to-WR3 E-plane transition (220-320 GHz) on a 95 µm-thick InP substrate. At 300 GHz, the maximum achieved RF output power of the fabricated MUTC-PD chip is -12.4 dBm at a photocurrent of 18.5 mA. For experimental characterization, the MUTC-PD chip with the integrated E-plane transition has been mounted on a 1 mm-thick soda-lime glass substrate as carrier and it has been manually aligned within a WR3 together with an adjustable back-short. Due to non-perfect alignment of the chip and the back-short as well as the additional losses and substrate modes due to the thick glass carrier, the calculated average IL is increased to 5.3 dB. Experimentally, an average IL of 8.6 dB is measured within the WR3-band from 220 GHz to 320 GHz. Integration of the chip in a real package without misalignment and without the glass carrier is expected to improve the IL by ~4.8 dB.

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Section: Numerical Analysismentioning

confidence: 99%

Monolithically Integrated THz Photodiodes With CPW-to-WR3 E-Plane Transitions for Photodiodes Packages With WR3-Outputs

Makhlouf

Dulme

Grzeslo

et al. 2021

J. Lightwave Technol.

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“…For instance, the BGA, its most popular form, has been used all over the world for electronic equipment manufacture. In case of technical research, there is the TSV-BGA vertical transition at MMW band [23], the waveguide-to-planar transmission line transition, and the typical microstrip-to-waveguide transition [24]- [27] and CPW-to-waveguide transition [28], the latter of which is a non-substrate type. More essentially, the coaxial-waveguide transition [29] is one of the representative structures of a non-substrate type vertical transition.…”

Section: Introductionmentioning

confidence: 99%

Experimental Verification of Excavated Structure on Multi-Layered Substrates for Millimeter-Wave Signal Vertical Transition Using Copper Balls

Yoshida

Nishikawa

2020

IEEE Access

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This paper presents a vertical transition of millimeter-wave signal for interconnection between multi-layered substrates, which utilizes copper balls for vertical interconnection, as both for electrical connection and physical support. In particular, the copper balls were used to configure a quasi-coaxial transmission line at the vertical interconnection. The key idea was to create an excavated structure at the location of the copper balls to fix it, given that the copper balls slightly fluctuate during reflow soldering when simply placed on a flat surface. Such activity of the copper balls defines large variation in transmission characteristics at millimeter-wave band that produce low yield rate. Practically, with the proposed method of an excavated structure, the location error of the copper balls can be minimized, leading to high reproducibility in determining the copper balls location, and small variation of the transmission characteristics. To verify the method's effectiveness, a prototype having three vertically stacked multi-layered substrates with the excavated structure was fabricated. The excavation had a depth of 90 µm and diameter of 0.45 mm. The copper balls used had a 0.3-mm diameter. Five samples were fabricated and then evaluated by X-ray images and S-parameter measurements. Based on the results, the reflection characteristics of the measurement were less than −10 dB from dc to 97 GHz in the best-case scenario, whereas the variation in the S-parameters was comparatively small up to 70 GHz. Moreover, the X-ray images showed relatively small copper balls location error. These results indicate that the proposed excavated structure is effective for millimeter-wave vertical interconnections using copper balls, in small wireless terminal applications.

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A D-Band Self-Packaged Low Loss Grounded Coplanar Waveguide to Rectangular Waveguide Transition With Silicon-Based Air Cavity-Backed Structure

Zhang,

Huang,

Zhou

et al. 2024

IEEE J. Microw.

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A D-Band Rectangular Waveguide-to-Coplanar Waveguide Transition Using Metal Ridge

Cited by 9 publications

References 10 publications

Monolithically Integrated THz Photodiodes With CPW-to-WR3 E-Plane Transitions for Photodiodes Packages With WR3-Outputs

Monolithically Integrated THz Photodiodes With CPW-to-WR3 E-Plane Transitions for Photodiodes Packages With WR3-Outputs

Experimental Verification of Excavated Structure on Multi-Layered Substrates for Millimeter-Wave Signal Vertical Transition Using Copper Balls

A D-Band Self-Packaged Low Loss Grounded Coplanar Waveguide to Rectangular Waveguide Transition With Silicon-Based Air Cavity-Backed Structure

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