A DBR laser employing passive-section heaters, with 10.8 nm tuning range and 1.6 MHz linewidth

Kameda, Toshihiro; Mori, Hiroshi; Onuki, S.; Kikugawa, T.; Takahashi, Yoshifumi; Tsuchiya, F.; Nagai, Haruo

doi:10.1109/68.219684

Cited by 32 publications

(5 citation statements)

References 6 publications

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“…There have been several reports on 1.5mm InGaAsP/InP DFB and DBR lasers integrated with thin film heaters [5], [6], but the heater current required to obtain a tuning range of 3nm was 200mA [5], which is more than a factor of 4 higher than the laser operating current to obtain an output power of 5mW. This high heater current was an obstacle for these lasers to find practical applications and is due to the low electrical resistance from Pt thin films formed by evaporation processes.…”

Section: Introductionmentioning

confidence: 99%

Novel tunable DFB lasers with FIB-deposited heaters

Sin

Presser

Mason

2005

Novel in-Plane Semiconductor Lasers IV

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Among various types of tunable lasers, distributed Bragg reflection lasers employing chirped gratings have shown a wide tuning range, but they are difficult to fabricate and require sophisticated control electronics. On the other hand, distributed feedback lasers, although their tuning range is narrower than DBR lasers, do not suffer from the aforementioned problems. Thermally tunable 1.5mm DFB and DBR lasers with thin film heaters have been reported, but their heater currents were too high to find practical use. We report on novel tunable DFB lasers at 1.3mm with thin film heaters deposited by focused ion beam that require much smaller heater currents than previously reported. The lasers were InGaAsP/InP multiple quantum well DFB lasers grown by metal-organic chemical vapor deposition. Pt heater strips were deposited by FIB processing on the top surface of the completed lasers. Our FIB process can control Pt film resistivities between 24 and 105W-µm. The CW laser threshold was 12mA at room temperature without the heater current, the lasing wavelength was 1309.5nm at 27mW, and the sidemode suppression ratio was over 40dB. As the heater current increased to 13mA, the lasing wavelength shifted to 1314.4nm. The tuning efficiency of 5.9nm/W was almost twice that reported previously. FIB was also employed to deposit Au pads for the lasers. To the best of the authors' knowledge, this is the first application of FIB deposition processes to semiconductor lasers.

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Section: Introductionmentioning

confidence: 99%

Novel tunable DFB lasers with FIB-deposited heaters

Sin

Presser

Mason

2005

Novel in-Plane Semiconductor Lasers IV

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“…Distributed Bragg reflector (DBR) lasers have several advantages such as dynamic single-mode lasing and high spectrum purity, and the lasing wavelength can be tuned by changing the refractive index in the DBR region. 1,2) Tunable DBR lasers utilizing refractive index changes caused by carrier injection [3][4][5][6] or thermal heating [7][8][9][10][11] have been developed.…”

Section: Introductionmentioning

confidence: 99%

“…Widely tunable dual-mode semiconductor lasers with thin-film heaters for tunable THz wave generation have been demonstrated. 15,16) By forming a thin-film heater 9,11,15,16) just above the DBR grating, the DBR grating can be heated efficiently, and a tunable DBR laser with a wide tuning range can be realized. Furthermore, by employing a GaAsP strained quantum well (QW) that provides a high modal gain 17,18) as an active layer, a higher output power and a wider tuning range can be expected.…”

Section: Introductionmentioning

confidence: 99%

GaAsP tunable distributed Bragg reflector laser with indium tin oxide thin-film heater

Uemukai¹,

Suhara²

2016

Jpn. J. Appl. Phys.

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A GaAsP quantum well tunable distributed Bragg reflector (DBR) laser with a thin-film heater above a DBR grating was designed and fabricated. As a result of the optimization of the DBR grating to obtain both high reflectivity and sharp wavelength selectivity, single-mode lasing with an output power of 54 mW and a side-mode suppression ratio of 43 dB was obtained. By forming the transparent thin-film heater at a distance of 0.1 µm above the DBR grating, the DBR grating was heated locally and efficiently, and a wide wavelength tuning range of 5.2 nm was achieved by heating with a heater power as low as 160 mW.

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“…Hence, the great enhancement of both spectral tuning range and uniformity of the lasing power is always expected for the tunable lasers. For this reason, scientists have been seeking out new techniques to obtain a more uniform (flat-top) gain distribution with a broader bandwidth for tunable semiconductor lasers. − This work is still in progress, and no effective approach or new quantum-confined structure has been found to significantly change the current situation so far. In all existing techniques, only a few approaches have shown a certain improvement on both gain uniformity (flatness) and bandwidth.…”

mentioning

confidence: 99%

InGaAs-Based Well–Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance

Jia

et al. 2018

ACS Photonics

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In the development of semiconductor lasers, it has been a dream all along to simultaneously obtain extremely wide and uniform gain distribution, because such a gain configuration can greatly enhance semiconductor laser performance. Hence, it has also been a huge challenge to realize this dream so far. In this paper, we are reporting a special InGaAs-based well–island composite quantum-confined structure, with which the best results to date in achieving both superwide and very uniform gain and power distributions are obtained. The spectral flatness of the output power can reach 0.1 dB, and the gain bandwidth is broadened to 6-fold broader than the fwhm (full width at half-maximum) of the standard gain spectrum from a classic InGaAs quantum well under the same carrier density. The formation of the well–island composite quantum-confined structure is associated with the indium-rich island effect in the material growth. The great significance of this work lies in that it is making the above dream come true, since it not only can tremendously increase the spectral tuning range of an InGaAs-based semiconductor laser but also exhibits a great potential on achieving uniform output power over the full spectral tuning range of the laser.

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A DBR laser employing passive-section heaters, with 10.8 nm tuning range and 1.6 MHz linewidth

Cited by 32 publications

References 6 publications

Novel tunable DFB lasers with FIB-deposited heaters

Novel tunable DFB lasers with FIB-deposited heaters

GaAsP tunable distributed Bragg reflector laser with indium tin oxide thin-film heater

InGaAs-Based Well–Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance

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