A DC-30 GHz high performance packaged RF MEMS SPDT switch

Abstract

International audienceThis paper deals with the development of an RF MEMS SPST (Single-Pole Single-Throw) and SPDT (Single-Pole double-Throw) switch fabricated on a glass substrate with hermetic package. The fabricated SPDT switch leads to a compact device (2.3×1.6 mm2) and can address applications ranging from DC to 30 GHz with an isolation of 40 dB and insertion loss better than 0.8 dB on the entire frequency band

Microwave Liquid Crystal Enabling Technology for Electronically Steerable Antennas in SATCOM and 5G Millimeter-Wave Systems

“… in semiconductor technologies [5][6][7][8][9][10], in particular silicon technologies (Complementary Metal-Oxide-Semiconductor (CMOS) and Bipolar CMOS) that offer much lower cost as compared to Indium Phosphide (InP) or Gallium Arsenide (GaAs) technologies, and can address consumer applications,  with RF MicroElectroMechanical Systems (RF-MEMS) [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25], and  by using functional materials such as ferrites [26][27][28], ferroelectrics, mainly Barium Strontium Titanate (BST) capacitors, filters, and phase shifters in thin or thick-film technology [29][30][31][32][33][34][35][36][37][38][39][40][41][42][43][44] and the Microwave Liquid Crystal (MLC) technology beyond optics.…”

“…These reconfigurable/tunable components such as RF switches, varactors, adaptive matching networks and filters, frequency-agile antennas, frequency-selective surfaces, polarization-agile antennas and polarizer, discrete, and continuous phase shifters, and based on it, beam-steering antennas can be realized with different materials and technologies, which are symbolized in Figure 4 at the lower left: in semiconductor technologies [5][6][7][8][9][10], in particular silicon technologies (Complementary Metal-Oxide-Semiconductor (CMOS) and Bipolar CMOS) that offer much lower cost as compared to Indium Phosphide (InP) or Gallium Arsenide (GaAs) technologies, and can address consumer applications, with RF MicroElectroMechanical Systems (RF-MEMS) [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25], and by using functional materials such as ferrites [26][27][28], ferroelectrics, mainly Barium Strontium Titanate (BST) capacitors, filters, and phase shifters in thin or thick-film technology [29][30][31][32][33][34][35][36][37][38][39][40][41][42][43][44] and the Microwave Liquid Crystal (MLC) technology beyond optics.…”

A broadband DC to 20 GHz 3-bit MEMS digital attenuator

“…The radio frequency (RF) MEMS device has been widely used and brought new solutions for improving the performance of an RF system. In particular, the RF MEMS switch has become a key possibility for advancing the performance of RF systems due to its high linearity and isolation, wide bandwidth and low power consumption [1][2][3][4]. The MEMS attenuator based on the RF MEMS switch has competitive advantages in power consumption, insertion loss and linearity [5], which can satisfy the strict requirements of the electronic system.…”