A DC and small signal AC model for organic thin film transistors including contact effects and non quasi static regime

Valletta, A.; Rapisarda, M.; Calvi, Sabrina; Fortunato, G.; Frasca, Mattia; Maira, Giovanni; Ciccazzo, A.; Mariucci, L.

doi:10.1016/j.orgel.2016.11.027

Cited by 19 publications

(25 citation statements)

References 21 publications

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“…The physical mechanisms that take place at the contact region of an OTFT influence the final functional appearance of a model that aims to describe the current-voltage characteristics of the device. This is the case of a widely-used [31,34,36,[41][42][43][44][45][46] generic model for OTFTs [19,20]:…”

Section: Models For the Contact Region Of Otftsmentioning

confidence: 99%

“…Different expressions have been developed in the past, depending on the dominant conduction mechanism through the contact. The cases controlled by space-charge limited transport in low energy contactbarriers [21] or injection limited transport in Schottky barriers [32][33][34][35] are reviewed below.…”

Section: Models For the Contact Region Of Otftsmentioning

confidence: 99%

“…A generic analytical model and associated parameter extraction method for the current-voltage characteristics of OTFTs was derived in [19,20], which allows a functional model of the carrier injection through the source contact. Later works have specified this functional model to situations in which one conduction mechanism is dominant, such as the cases of spacecharge limited transport in low energy contact-barriers [21] or injection limited transport in Schottky barriers [32][33][34][35]. Despite these previous efforts, there is no standard OTFT compact model that unifies all the different physical phenomena that take place at the contact region of the OTFT.…”

Section: Introductionmentioning

confidence: 99%

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Versatile model for the contact region of organic thin-film transistors

Romero

González

Deen

et al. 2020

Organic Electronics

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Contact effects in organic thin film transistors (OTFTs) remain an important problem to be solved in these devices. Therefore, the correct physio-chemical modeling of the contact regions in OTFTs is necessary. In this work, a standard model for the contact region of OTFTs is proposed. It is a versatile model that describes the current-voltage characteristics of different kinds of contacts. It reproduces the behavior of Schottky barrier or space-charge limited contacts. It is a simple unified model since only a single parameter is necessary in order to distinguish between both kinds of contacts. The model is easily integrated in a generic compact model for the current-voltage characteristics of OTFTs. The resulting compact model, used in combination with an evolutionary parameter extraction procedure, allows to extract the intrinsic parameters and the current-voltage curves at the contact of single short-channel transistors. There is no need to use transistors with multiple channel lengths to accurately characterize the contact region or the active channel of the transistor. The model is tested with published experimental data of OTFTs with Schottky barrier or space-charge limited contacts. Finally, the method has been used as a diagnostic tool to analyze how an ammonia sensor reacts to different concentrations of the ammonia gas. Interestingly, alterations in the contact region have been detected when the gas concentration varies, transforming the space-charge limited contact of a pristine OTFT into a Schottky barrier contact under the exposure of gas.

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Section: Models For the Contact Region Of Otftsmentioning

confidence: 99%

Section: Models For the Contact Region Of Otftsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Versatile model for the contact region of organic thin-film transistors

Romero

González

Deen

et al. 2020

Organic Electronics

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“…Nevertheless, they also have important limitations, for example a low carrier mobility compared to inorganic TFTs ( [1][2][3]), high process variability [4,5], or degraded performance characteristics due to contact effects. Contact effects, specifically, have been extensively studied in order to introduce them in transistor compact models [6][7][8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Evolutionary parameter extraction for an organic TFT compact model including contact effects

Romero

González

Picos

et al. 2018

Organic Electronics

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In this work, an evolutionary parameter extraction procedure is combined with a compact model for the current-voltage characteristics of organic thin-film transistors as a part of a circuit design tool to extract the device parameters. This procedure can be used to overcome shortcomings of previous parameter extraction procedures. The proposed evolutionary procedure can be used in those situations whereby the parameter set extracted by other procedures does not comply its physical meaning, or if a poor agreement between the experimental data and the analytical results exists. In the last case, the evolutionary procedure can be used as a problem optimization method. After the evolutionary parameter extraction procedure is applied to the transistor output characteristics, the obtained results show an excellent agreement with the experimental data.

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“…To address particular principles and features of the OTFTs and/or adopt simplifications to provide an accessible analysis, various OTFT compact models were developed. [3][4][5] Examples include, a d.c. model considering Schottky barrier limitation on carrier injection in short channel transistors and a small signal a.c. non-quasi-static model addressing parasitic capacitances in printed devices which exhibit large process tolerances [6]. The aim of our semi-empirical model is to help with the design of flexible sensors and circuits implementing low-voltage OTFTs with multi-finger contacts based on DNTT and this paper represents the first step.…”

Section: Advances Over Previous Workmentioning

confidence: 99%

Compact Modeling of Organic Transistors with Multi-Finger Contacts

Ruzaiqi

Nikolov

Chen

et al. 2019

2019 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)

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Organic thin-film transistors (OTFTs) with multi-finger contacts based on dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) exhibit near-zero turn-on voltage, hysteresisfree behavior, and high transconductance of 30-80 A at V DS = V GS = −2 V. [1] In addition, common-source amplifiers based on such transistors deliver voltage gain even when the supply voltage is limited to 5 V, making them attractive for flexible/ wearable analog sensors. This paper presents the results of compact modeling, implemented in Matlab Simulink, applied to such transistors. The measured transistor transfer characteristics are used to extract the parameters for the semiempirical model. The model was validated in 3 ways on 8 OTFTs with varied geometries and substrates (glass or PEN). The validation included calculations of (a) transistor output characteristics, (b) a.c. drain currents for 1 Hz sinusoidal gate voltages, and (c) output voltages of the common-source amplifier, and their comparison to the measured data.

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A DC and small signal AC model for organic thin film transistors including contact effects and non quasi static regime

Cited by 19 publications

References 21 publications

Versatile model for the contact region of organic thin-film transistors

Versatile model for the contact region of organic thin-film transistors

Evolutionary parameter extraction for an organic TFT compact model including contact effects

Compact Modeling of Organic Transistors with Multi-Finger Contacts

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