A DC Model for Organic Electrochemical Transistors and Analysis of Their Performance as Voltage Amplifiers

Abstract

Organic electrochemical transistors (OECTs) have received a great deal of attention, especially in biomedical applications, since their emergence in the mid-1980s. Despite many efforts on modeling these transistors, simulating OECT-based circuits is still a challenge due to a lack of precise mathematical models. In this paper, some of the main features of OECTs are analyzed and a DC model is proposed that more closely mimics the transistors' characteristics compared to the well-accepted Bernards-Malliaras (B-M) model. While OECTs are mostly considered as transconductance amplifiers, the potential of using these transistors as voltage amplifiers is investigated here with measurements at various drain-source voltages. Compared to the B-M model, the proposed model has improved matching up to 3.6% between simulations and measurements of the analyzed transistors.

Implementation and simulation of drift-diffusion models for organic mixed conductor devices

“…For this reason, more practical approach have already been discussed in literature, where the problem is further reduced to one dimension. 44,53,54,56,[78][79][80] In 2007, D. Bernards and G. Malliaras 44 reported the first of such formulations, which became the standard capacitive models broadly used to extract device and materials parameters for OECTs in the steady state. Later, G. C. Faria and D. Duong extended the concept introduced by Bernard and Malliaras in order to improve the description of transient behavior of OECTs.…”