A Design Based on Stair-case Band Alignment of Electron Transport Layer for Improving Performance and Stability in Planar Perovskite Solar Cells

Lin, Ming-Nan; Chang, Sheng Hao; Tu, Wei; Chu, Chih Wei; Chang, Yia-Chung

doi:10.48550/arxiv.1708.03153

Cited by 1 publication

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“…On the one hand, as explained above, the increase in current intensity can be linked to the n-doping of ZnO by Al. On the other hand, Al doping is well known to improve the stability of ZnO [49,50]. Still the structural properties remained those of ZnO and sensitivity to moisture and oxygen, although reduced, remained close to that of undoped ZnO.…”

Section: Stabilization Of the Electrical Properties With Encapsulationmentioning

confidence: 98%

Al₂O₃, Al doped ZnO and SnO₂ encapsulation of randomly oriented ZnO nanowire networks for high performance and stable electrical devices

Morisot¹,

Nguyễn²,

Montemont³

et al. 2019

Nanotechnology

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Two-dimensional randomly oriented nanowire (NW) networks, also called nanonets (NNs), have remarkable advantages including low-cost integration, good reproducibility and high sensitivity, which make them a promising material for electronic devices. With this work, we focus on the study of ZnO NNs as channel materials in field effect transistors (FETs). In our process, ZnO NWs were assembled in NNs by the liquid filtration method and were integrated in transistors, with the bottom-gate configuration, using simple technological steps. Non-encapsulated devices exhibited state of the art performances but their stability toward air exposure was poor. Using a proper encapsulation of the nanonets, with cheap, abundant and non-toxic oxides, we demonstrate our ability not only to stabilize their electrical properties, but also to enhance performance to values never reach before for ZnO NW-based transistors. Our best FETs exhibit a low Off-current while maintaining a very good On-current, which results in a I on /I off ratio exceeding 10 6 for a drain voltage of 5 V. The behavior of these ZnO NN-based FETs was studied for three different encapsulation materials, alumina (Al 2 O 3 ), tin oxide (SnO 2 ) and Aldoped ZnO (AZO). These results prove that ZnO NNs are highly promising materials for an easy and low-cost integration into FETs.

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Section: Stabilization Of the Electrical Properties With Encapsulationmentioning

confidence: 98%

Al₂O₃, Al doped ZnO and SnO₂ encapsulation of randomly oriented ZnO nanowire networks for high performance and stable electrical devices

Morisot¹,

Nguyễn²,

Montemont³

et al. 2019

Nanotechnology

View full text Add to dashboard Cite

show abstract

A Design Based on Stair-case Band Alignment of Electron Transport Layer for Improving Performance and Stability in Planar Perovskite Solar Cells

Cited by 1 publication

References 3 publications

Al₂O₃, Al doped ZnO and SnO₂ encapsulation of randomly oriented ZnO nanowire networks for high performance and stable electrical devices

Al₂O₃, Al doped ZnO and SnO₂ encapsulation of randomly oriented ZnO nanowire networks for high performance and stable electrical devices

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A Design Based on Stair-case Band Alignment of Electron Transport Layer for Improving Performance and Stability in Planar Perovskite Solar Cells

Cited by 1 publication

References 3 publications

Al2O3, Al doped ZnO and SnO2 encapsulation of randomly oriented ZnO nanowire networks for high performance and stable electrical devices

Al2O3, Al doped ZnO and SnO2 encapsulation of randomly oriented ZnO nanowire networks for high performance and stable electrical devices

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Al₂O₃, Al doped ZnO and SnO₂ encapsulation of randomly oriented ZnO nanowire networks for high performance and stable electrical devices

Al₂O₃, Al doped ZnO and SnO₂ encapsulation of randomly oriented ZnO nanowire networks for high performance and stable electrical devices