A design concept for radiation hardened RADFET readout system for space applications

Andjelković, Marko; Simevski, Aleksandar; Chen, Junchao; Schrape, Oliver; Stamenković, Zoran; Krstić, Miloš; Ilić, Stefan D.; Ristić, Goran S.; Jakšić, A.; Vasovic, Nikola; Duane, Russell; Palma, A.; Lallena, A.M.; Rodríguez, Miguel Ángel Carvajal

doi:10.1016/j.micpro.2022.104486

Cited by 6 publications

(2 citation statements)

References 35 publications

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“…These circuits often incorporate analogue front-end components, signal amplification stages, and digital interfaces for data acquisition and analysis. The integration of these circuits with the RadFET sensor allows for real-time radiation monitoring and data transmission, as citied in [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Development and Fabrication of MOSFET-Based Radiation Dosimeter (RadFET) for Enhanced Performance in Space Missions

Dalia Elfiky,

Ahmed S. Abd-Rabou,

Haitham Akah

et al. 2024

ARASET

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This work presents the development and fabrication process of a radiation dosimeter based on Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) technology, known as RadFET. The aim of this study is to determine the specifications of the RadFET sensor for use in space missions by the Egyptian Space Agency in SPNeX mission. We have successfully determined the sensor specifications, specified the required electronic components for readout circuits, and confirmed the correct operation of the RadFET device through device simulations and radiation-induced damage models. The fabrication process was conducted at Zewail City of Science, Technology and Innovation cleanroom facility, utilizing Sentaurus TCAD for device and process simulations. We have conducted fabrication experiments for phosphorus spin-on dopant application, dry oxide growth, and wet oxidation using water vapor bubblers. The dosimeter readout PCB fabrication and assembly phases have been successfully completed. The developed RadFET dosimeter holds great promise for radiation monitoring in space missions, ensuring enhanced safety and reliability of electronic systems.

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Section: Introductionmentioning

confidence: 99%

Development and Fabrication of MOSFET-Based Radiation Dosimeter (RadFET) for Enhanced Performance in Space Missions

Dalia Elfiky,

Ahmed S. Abd-Rabou,

Haitham Akah

et al. 2024

ARASET

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“…This results in a change in the transfer characteristics of the field-effect transistors, including the threshold voltage [ 1 , 2 , 3 , 4 , 5 , 6 ]. In this context, the use of an appropriate readout circuit to track these electrical changes enables accurate measurement of radiation dose [ 7 , 8 ].…”

Section: Introductionmentioning

confidence: 99%

Performance Projection of Vacuum Gate Dielectric Doping-Free Carbon Nanoribbon/Nanotube Field-Effect Transistors for Radiation-Immune Nanoelectronics

Tamersit,

Kouzou,

Rodriguez

et al. 2024

Nanomaterials

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This paper investigates the performance of vacuum gate dielectric doping-free carbon nanotube/nanoribbon field-effect transistors (VGD-DL CNT/GNRFETs) via computational analysis employing a quantum simulation approach. The methodology integrates the self-consistent solution of the Poisson solver with the mode space non-equilibrium Green’s function (NEGF) in the ballistic limit. Adopting the vacuum gate dielectric (VGD) paradigm ensures radiation-hardened functionality while avoiding radiation-induced trapped charge mechanisms, while the doping-free paradigm facilitates fabrication flexibility by avoiding the realization of a sharp doping gradient in the nanoscale regime. Electrostatic doping of the nanodevices is achieved via source and drain doping gates. The simulations encompass MOSFET and tunnel FET (TFET) modes. The numerical investigation comprehensively examines potential distribution, transfer characteristics, subthreshold swing, leakage current, on-state current, current ratio, and scaling capability. Results demonstrate the robustness of vacuum nanodevices for high-performance, radiation-hardened switching applications. Furthermore, a proposal for extrinsic enhancement via doping gate voltage adjustment to optimize band diagrams and improve switching performance at ultra-scaled regimes is successfully presented. These findings underscore the potential of vacuum gate dielectric carbon-based nanotransistors for ultrascaled, high-performance, energy-efficient, and radiation-immune nanoelectronics.

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The Deep Space Radiation Probe: Development of a first lunar science payload for space environment studies and capacity building

Chang,

Lin,

Chou

et al. 2024

Advances in Space Research

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A design concept for radiation hardened RADFET readout system for space applications

Cited by 6 publications

References 35 publications

Development and Fabrication of MOSFET-Based Radiation Dosimeter (RadFET) for Enhanced Performance in Space Missions

Development and Fabrication of MOSFET-Based Radiation Dosimeter (RadFET) for Enhanced Performance in Space Missions

Performance Projection of Vacuum Gate Dielectric Doping-Free Carbon Nanoribbon/Nanotube Field-Effect Transistors for Radiation-Immune Nanoelectronics

The Deep Space Radiation Probe: Development of a first lunar science payload for space environment studies and capacity building

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