A design of temperature-compensated CMOS mixer with adjustable PTAT biasing circuit

Hwang, Hyeonseok; Jo, Byeonghak; Oh, Sangsuk

doi:10.1109/apmc.2008.4958368

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“…A PTAT bias current [13] (I PTAT ) is chosen to pre-charge the VC PTAT during the T PTAT PRECH . It is clear that, in order to generate T PTAT , a biasing current with a positive temperature coefficient is required.…”

Section: Circuit Detailsmentioning

confidence: 99%

A 0.017 µJ/sample 313 K sample/sec clamped sensing-based time domain CMOS temperature sensor

Park

Choi

Hwang

et al. 2015

IEICE Electron. Express

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This paper describes the design of a CMOS temperature sensor intended to compensate for the thermal effect of NAND Flash cells. The temperature sensor is mainly composed of a SENSOR part and COUNTER part. The SENSOR part generates a pulse (T PTAT ); its width is proportional to absolute temperature (PTAT). Futhermore, the clamped sensing scheme is used to eliminate the effects of temperature and process skew variation of sensing circuits. The COUNTER part converts T PTAT to digital codes. The proposed temperature sensor consumes a 0.017 µJ/sample at a conversion rate of 313 K sample/sec.

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Section: Circuit Detailsmentioning

confidence: 99%