A design oriented charge-based current model for symmetric DG MOSFET and its correlation with the EKV formalism

International audienceThis paper presents a new compact model for the undoped, long-channel double-gate (DG) MOSFET under symmetrical operation. In particular, we propose a robust algorithm for computing the mobile charge density as an explicit function of the terminal voltages. It allows to greatly reduce the computation time without losing any accuracy. In order to validate the analytical model, we have also developed the 2D simulations of a DG MOSFET structure and performed both static and dynamic electrical simulations of the device. Comparisons with the 2D numerical simulations give evidence for the good behaviour and the accuracy of the model. Finally, we present the VHDL-AMS code of the DG MOSFET model and related simulation results

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“…A full description of the implicit model can be found in Reference [10]. The main assumptions of our model are the following: the body (i.e.…”

Section: Implicit Modelmentioning

confidence: 99%

Explicit modelling of the double-gate MOSFET with VHDL-AMS

Prégaldiny¹,

Krummenacher

Diagne³

et al. 2006

Int. J. Numer. Model.

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“…The models in [18] and [19] are two interesting descriptions of DG MOSFETS which derive expressions for mobile charge densities and current along the channel in long-channel devices. In [19], a description of Short-Channel Effects (SCE) in subthreshold region, including Drain Induced Barrier Lowering (DIBL), sub-threshold swing and mobility degradation [1], enters into the expressions of charge and current.…”

Section: B Multi-gate Device Modelsmentioning

confidence: 99%

“…Given the structural similarities between DG MOSFET and FinFET, several models for the latter are directly derived from the models for the former (if the top gate is sufficiently high to neglect the edge effects). In particular, [37] exploits the results of [18] to derive a model for FinFETs including drain saturation voltage and quantum-mechanical effects. However, [32] describes a PSP-based compact model for FinFETs which, taking advantage of the similarities of its hierarchical structure with PSP model, is particularly suitable for circuit simulations.…”

Section: B Multi-gate Device Modelsmentioning

confidence: 99%

“…Again, this is performed by substituting the employed models in the different sections. An interesting case is the cascade of FinFETs, where the models from [18] and [37] can be effortlessly adopted in applying the methodology discussed here, thanks to their evident similarities with [25] for Gate-All-Around MOSFETs.…”

Section: Sections With Different Geometrymentioning

confidence: 99%

“…Recent literature presents several compact models [1], [18]- [24] able to describe the electrical behavior of multi-gate transistors. Nevertheless, analyzing and verifying the behavior of circuits based on a large number devices of this kind is still hardly doable due to the computation complexity and the lack of a proper support of the gate independence in the existing models [6].…”

Section: Introductionmentioning

confidence: 99%

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Computationally Efficient Multiple-Independent-Gate Device Model

Antidormi

Frache

Graziano

et al. 2016

IEEE Trans. Nanotechnology

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Abstract-Nanowire Field Effect Transistors (FETs) with multiple independent gates around a silicon channel feature ultimate gate control and are regarded as promising candidates for next generation transistors. Being inherently more complex than conventional gate-all-around nanowire FETs, they require longer simulation times, especially with numerical simulations. We present a new model enabling the efficient computation of voltages and current in modular semiconductor structures with an arbitrary number of independent gate regions. Its validity extends on Gate-All-Around MOSFETs, FinFETs and gate-less channels. It exploits existing models for conventional devices and builds results on top of these. Being completely general, the method is independent from the models used to describe each region, a charge-based model in our case. Applied to a multiindependent-gate nanowire FET structure, extensive comparison of the proposed method with results from physics-based TCAD Atlas software and with numerical exact results show very good agreement with relative errors of less than 1.8% for potentials and less than 4% for currents, under a broad variations of physical parameters as well as biasing conditions. Interpreted language implementation shows a performance advantage in excess of one order of magnitude with respect to standard optimized numerical methods, still providing excellent accuracy, and making it suitable for implementation in circuit simulators.

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Non‐Classical MOSFET Structures

Bhattacharyya

2009

Compact Mosfet Models for VLSI Design

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A design oriented charge-based current model for symmetric DG MOSFET and its correlation with the EKV formalism

Cited by 146 publications

References 10 publications

Explicit modelling of the double-gate MOSFET with VHDL-AMS

Explicit modelling of the double-gate MOSFET with VHDL-AMS

Computationally Efficient Multiple-Independent-Gate Device Model

Non‐Classical MOSFET Structures

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