A design strategy for aGST-GST-VO₂-Ag based tunable thermal emitter

Abstract

This work demonstrates a mid-infrared emitter based on Ge8Sb2Te11 (GST) and VO2. The results show that GST and VO2 have contrasting optical properties, which enable the emitter to reach a modulation depth of up to 82.5%. Continuous modulation of the resonant peak in the broad spectral range of 6.3–9.2 μm was achieved by modulating the crystallization ratio of the top GST layer. The structure can reach a controllable average emissivity of 11.5%–83.4% within 5–8 μm, 2.0%–19.0% at 8–14 μm, and 6.0%–47.3% at 3–5 μm, which is close to an ideal thermal emitter performance. Moreover, the structure is insensitive to both incident angle and polarization.

Bicolor Regulation of an Ultrathin Absorber in the Mid-Wave Infrared and Long-Wave Infrared Regimes

“…Owing to the coherent bandwidth and narrow-band resonance, bicolor regulation between the MWIR and LWIR regimes is rarely reported. To date, only some theoretical principles of tunable thermal emitters with two or more PCMs have been reported. , However, in this regard, systematic investigations are required to overcome the challenges associated with the implementation of theoretical principles in experimental studies. A new physical mechanism that prevents the modulation of the whole MIR region is required to individually modulate the radiation properties of a single band without affecting the radiation properties of another band.…”