A Design Window for Device Parameters of Rectifying Diodes in 2.4 GHz Micro-watt RF Energy Harvesting

Yamazaki, Yutaro; Tsuchiaki, Masakatsu; Tanzawa, Toru

doi:10.1109/apmc46564.2019.9038772

Cited by 5 publications

(8 citation statements)

References 3 publications

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“…Based on the data of Figure 6a, I Vd is given by (1) as well as SD-CP. Assuming NMOSFET has a drain-to-source current as large as PMOSFET does, the peak current from one capacitor to the next is given by (7).…”

Section: More Accurate Model With Finite Output Resistancementioning

confidence: 99%

“…The Vds of each CTS transistor in XC and ULPD is half of that in SD. When Vds goes below V T , (7) indicates that Ids is reduced as Vds decreases.…”

Section: Validation Of the Proposed Modelmentioning

confidence: 99%

“…AC-DC charge pumps (CPs) are used to convert AC input power to DC output power for microwave wireless power transmission (MWPT) or RF energy harvesting (RF-EH) [1][2][3][4][5][6][7][8][9][10][11], biomedical applications [12][13][14][15][16], and vibration energy harvesting [17][18][19][20], as shown in Figure 1a-c. Figure 1d illustrates a block diagram of a CP composed of multiple rectifiers and capacitors connected in series between the input and output terminals.…”

Section: Introductionmentioning

confidence: 99%

“…The frequency of AC signals is spread depending on the use cases. MWPT utilizes ISM bands such as 920 MHz [1][2][3], 2.4 GHz [4][5][6][7], 5.8 GHz [8,9], and 24 GHz [10,11].…”

Section: Introductionmentioning

confidence: 99%

“…The Vds of each CTS transistor in XC and ULPD is half of that in SD. When Vds goes below VT,(7) indicates that Ids is reduced as Vds decreases.Figure16d-f show a comparison of Vpp-Ipp curves given by measurement between XC, ULPD, and SD at Vdd values of 400 mV in Figure16d, 200 mV in Figure16e, and 50…”

mentioning

confidence: 99%

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Modeling of Cross-Coupled AC–DC Charge Pump Operating in Subthreshold Region

Kotsubo,

Tanzawa

2023

Electronics

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This paper proposes a circuit model of a cross-coupled CMOS AC–DC charge pump (XC–CP) operating in the subthreshold region. The aim is to improve the efficiency of designing XC–CPs with a variety of specifications, e.g., input and output voltages and AC input frequency. First, it is shown that the output resistance (Ro) of XC–CP is much higher than those of CPs with single diodes (SD–CP) and ultra-low-power diodes (ULPD–CP) as charge transfer switches (CTSs). Second, the reason behind the above feature of XC–CP, identified by a simple model, is that the gate-to-source voltages of CTS MOSFETs are independent of the output voltage of the CP. Third, the high but finite Ro of XC–CP is explainable with a more accurate model that includes the dependence of the saturation current of MOSFETs operating in the subthreshold region on the drain-to-source voltage, which is a function of the output voltage of CP. The model is in good agreement with measured and simulated results of XC–, SD–, and ULPD–CPs fabricated in a 250 nm CMOS.

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Section: More Accurate Model With Finite Output Resistancementioning

confidence: 99%

“…The Vds of each CTS transistor in XC and ULPD is half of that in SD. When Vds goes below V T , (7) indicates that Ids is reduced as Vds decreases.…”

Section: Validation Of the Proposed Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…The frequency of AC signals is spread depending on the use cases. MWPT utilizes ISM bands such as 920 MHz [1][2][3], 2.4 GHz [4][5][6][7], 5.8 GHz [8,9], and 24 GHz [10,11].…”

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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