A detailed comparison of the temperature sensitivity of threshold of InGaAsP/InP, AlGaAs/GaAs, and AlInGaAs/InP lasers

Houle, T.J.; Williams, Kevin; Murray, Brad R.; Rorison, JM; White, I.H.; SpringThorpe, A. J.; White, K.; Paddon, P.; Crump, P.; Silver, M.

doi:10.1109/cleo.2001.947710

Cited by 4 publications

(3 citation statements)

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“…Candidate material systems for such sources operating at 1.31 µm include GaInSbAs/GaAlSbAs, 3 GaInNAs/GaAs, 4 InAsP/InAlGaAs 5 and AlGaInAs/InP. 6 This poor temperature performance makes necessary to use coolers to maintain the temperature of the device stable, those coolers; would multiply the prize of the system. Therefore, a candidate more stable with the temperature and that keeps all the good properties found for this material is needed.…”

Section: Introductionmentioning

confidence: 99%

Investigation on the high speed modulation in (GaIn)(NAs)/GaAs lasers

et al. 2005

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The potential of 1.3µm GaInNAs SQW laser diodes for high speed operation is experimentally investigated in this paper, computing the differential gain, dg/dn, at a temperature range suitable for most network applications (293K -348K) and the small signal modulation bandwidth. The investigation begins with a basic characterization calculating the T 0 , with a value of 56K in a range of temperatures of 293K -318K. The lasing wavelength at 293K is found to be 1250nm with a linear temperature dependence of 0.377nm/K. Secondly, the paper presents a detailed study of the modulation bandwidth of the device, obtaining a value of 6.06Ghz for the maximum modulation bandwidth at 293K with a modulation efficiency of 0.64GHz/ √ mA. In a range of temperatures of 293K -318K, the modulation bandwidth is found to decrease only slightly with the temperature with a slope of 0.0088Ghz/K. Finally, the paper explains the temperature behaviour obtained for the modulation bandwidth studying the temperature dependence of the differential gain, dg/dn. For this evaluation, the value of the differential gain with the current (how the peak gain changes with the sub-threshold bias current applied to the sample), dg/dI, is obtained using the Hakki-Paoli method. 1 Quasi-linear temperature dependence of this value has been obtained with a slope of 3.377cm −1 A −1 /K. Using impedance measurements, a relation between the carrier density, n, and the bias current applied to the laser, I, has been obtained. With this relation, we obtained the differential current with the carrier density, dI/dn. Then, we calculated the differential gain dg/dn = dg/dI · dI/dn. At 293K, the differential gain a value of 1.55 · 10 −15 cm 2 . To conclude we saw how the differential gain, dg/dn, has been found to have similar temperature behaviour as the small signal modulation bandwidth.

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Section: Introductionmentioning

confidence: 99%

Investigation on the high speed modulation in (GaIn)(NAs)/GaAs lasers

et al. 2005

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“…In the 1.31 m wavelength regime, the alternative material systems for edge emitters quantum well devices are GaInSbAs/GaAlSbAs, 5 GaInNAs/GaAs, 1 InAsP/InAlGaAs 6 and AlGaInAs/InP. 7 As one of the contenders to InP-based devides, GaInNAs/GaAs lasers keep attracting a big deal of interest in the actual research community. Previous modelling and experimental work, 8 , 9 , 10 has been developed and low Uw JTteriI gai.]…”

Section: Introductionmentioning

confidence: 99%

Improvements in GaInNAs/GaAs quantum-well lasers using focused ion beam post-processing

Pozo

Rorison

et al. 2006

SPIE Proceedings

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At the present time, there is a considerable demand for long wavelength (1.3µm -1.5µm) laser diodes for low cost data-communication applications capable of operating at high speed and at high ambient temperatures without the need for thermoelectric coolers. First proposed in 1995 by M. Kondow, 1 the GaInNAs/GaAs material system has attracted a great deal of interest as it promises good temperature performance. 2 The broad gain observed in GaInNAs/GaAs QW samples suggests that wavelength tuning should be possible by the application of gratings to select an optical mode. In addition, splitting the contact has been shown to improve modulation speed in other materials. 3 These two methods should be able to be used jointly and processed together.The use of split-contact lasers has the advantage of that no change is made in the processing steps, since there is only need for a new metal mask to define a new top p-contact. Despite the bandwidth enhancement of two-contact lasers compared to the single contact case is well known, 3 to the authors' knowledge, so far it has not being applied to GaInNAs/GaAs lasers.The use of Bragg-gratings on the ridge waveguide of the laser will generate a periodic modulation inducing an interaction between the forward and backward travelling modes. The effect of this interaction is the one of a band pass filter on the gain shape of the laser, allowing filtering out the actual lasing wavelength, and tuning the lasing wavelength in the range of wavelengths with substantial optical gain. Therefore, this method can be used optimally in lasers with broad gain, as is the case of GaInNAs/GaAs. 2In this paper, we reveal experimental investigations in how to apply these two post-processing methods to 600m-long 1.25µm-Ga 0 .66In 0 .34N 0 .01As0. 0 .99/GaAs 6nm-single quantum-well ridge waveguide lasers.

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“…This insensitivity was quantified in terms of To and localized To values. Localized To values of 63K at 98°C [2] have been recorded for similar devices. We have characterized the AlGaInAs system in term of the transparency current density, effective diffusion length, internal absorption, loss and efficiency, and differential gain.…”

Section: Introductionmentioning

confidence: 99%