A detailed study of physical properties of ZnS quantum dots synthesized by reverse micelle method

Shakur, H.R.

doi:10.1016/j.physe.2011.10.021

Cited by 49 publications

(13 citation statements)

References 30 publications

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“…In the recent past, metal-doped II-IV chalcogenide semiconductors have attracted much interest due to their potential in variety of applications in electroluminescent devices, displays, sensors, lasers, solar cells and other optoelectronic devices [1][2][3]. Among the II-IV class semiconductors, the ZnS characterized by a direct band gap of 3.7 eV and a large exciton banding energy (40 eV) has received huge interest [4][5][6][7][8][9][10] due to its chemical efficiency, non toxicity and therefore more environmentally friendly in comparison with other II-IV class semiconductors and other chalcogenides like ZnSe.…”

Section: Introductionmentioning

confidence: 99%

Nanostructured Cu-doped ZnS polycrystalline thin films produced by a wet chemical route: the influences of Cu doping and film thickness on the structural, optical and electrical properties

Göktaş

Aslan

Tumbul

2015

J Sol-Gel Sci Technol

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A wet chemical route was successfully employed to synthesize nanostructured Cu-doped ZnS polycrystalline thin films with Cu-doping content varying from 0 to 20 %. X-ray diffraction measurements showed that both the undoped and the Cu-doped ZnS films possess a cubic crystal structure with (111) preferential orientation with an average crystallite size between 9 and 21 nm. Scanning electron microscope exhibited the surface of the nanostructured films to be homogeneous and dense, and the grains have good connectivity with each others. Using energy-dispersive X-ray studies, the presence of Cu in the Zn-S lattice was detected, which was in agreement with the concentration of precursors and the Cu ratios initially used for starting solutions. Optical studies showed a red shifting of absorption edge and a decrease in the optical band gap value from 3.60 to 3.32 eV as the Cu content and the film thickness increased. It was also observed that the increased Cu doping and film thickness resulted in a reduction in refractive index (n), with an increment of extinction coefficient (k) values in the visible range. However, by increasing the Cu dopant from 10 to 20 % Cu, the films exhibited a decrease in electrical resistivity with improvement in crystalline quality.

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Section: Introductionmentioning

confidence: 99%

Nanostructured Cu-doped ZnS polycrystalline thin films produced by a wet chemical route: the influences of Cu doping and film thickness on the structural, optical and electrical properties

Göktaş

Aslan

Tumbul

2015

J Sol-Gel Sci Technol

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“…77-2100). The three diffraction peaks correspond to (1 1 1), (2 2 0) and (3 1 1) planes of cubic ZnS polycrystalline structure [20]. For samples II, III and IV there is slight shift in the peak positions and increase in peak broadening.…”

Section: Characterization Methodsmentioning

confidence: 91%

Synthesis and characterization of biopolymer protected zinc sulphide nanoparticles

Senapati¹,

Sarkar

2015

Superlattices and Microstructures

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“…where n C is the intrinsic conversion efficiency, defined as the fraction of the irradiation photon energy that is turned into optical photon energy, and E λ is the optical photon energy [33][34][35][36]. The value of n C , as well as the optical photon emission spectrum, is largely affected by the scintillator synthesis method [22,35,[37][38][39][40][41][42]. The value of n C for the ZnCuInS/ZnS QDs was calculated according to literature data, where a quantum yield (QY) of 33.65% [21] has been reported for approximately 350 nm excitation and optical photon production at approximately 530 nm as…”

Section: Methodsmentioning

confidence: 99%

Optical Characteristics of ZnCuInS/ZnS (Core/Shell) Nanocrystal Flexible Films Under X-Ray Excitation

et al. 2019

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The aim of this article is to evaluate optical characteristics, such as the intrinsic conversion efficiency and the inherent light propagation efficiency of three polymethyl methacrylate (PMMA)/methyl methacrylate (MMA) composite ZnCuInS/ZnS (core/shell) nanocrystal flexible films. The concentrations of these were 100 mg/mL, 150 mg/mL, and 250 mg/mL, respectively. Composite films were prepared by homogeneously diluting dry powder quantum dot (QD) samples in toluene and subsequently mixing these with a PMMA/MMA polymer solution. The absolute luminescence efficiency (AE) of the films was measured using X-ray excitation. A theoretical model describing the optical photon propagation in scintillator materials was used to calculate the fraction of the generated optical photons passed through the different material layers. Finally, the intrinsic conversion efficiency was calculated by considering the QD quantum yield and the optical photon emission spectrum.

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A detailed study of physical properties of ZnS quantum dots synthesized by reverse micelle method

Cited by 49 publications

References 30 publications

Nanostructured Cu-doped ZnS polycrystalline thin films produced by a wet chemical route: the influences of Cu doping and film thickness on the structural, optical and electrical properties

Nanostructured Cu-doped ZnS polycrystalline thin films produced by a wet chemical route: the influences of Cu doping and film thickness on the structural, optical and electrical properties

Synthesis and characterization of biopolymer protected zinc sulphide nanoparticles

Optical Characteristics of ZnCuInS/ZnS (Core/Shell) Nanocrystal Flexible Films Under X-Ray Excitation

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