2014
DOI: 10.1002/pssa.201431348
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A detailed study of self-assembled (Al,Ga)InP quantum dots grown by molecular beam epitaxy

Abstract: We report on the structural and optical properties of selfassembled (Al,Ga)InP quantum dots (QDs) with varying material composition embedded in a (Al 0.30 Ga 0.70 ) 0.51 In 0.49 P matrix. The samples were grown by gas-source molecular beam epitaxy. Atomic force microscopy was used to study the structural properties of the quantum dots, revealing a strong dependence of the morphology on the material composition.Low-temperature ensemble photoluminescence was observed between 590 nm and 720 nm. Temperature and ex… Show more

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