A detailed study on current–voltage characteristics of Au/n-GaAs in wide temperature range

Özavcı, E.; Demirezen, S.; Aydemir, Umut; Altındal, Ş.

doi:10.1016/j.sna.2013.02.018

Cited by 72 publications

(64 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…varies from 0.78 eV at 80 K to a maximum of 0.86 eV at 400 K whereas n decreases from 1.21 at 80 K to 1.02 at 400 K. This behaviour of the barrier height during annealing is contrary to the negative temperature coefficient for n-GaAs and has been observed by other researchers [7,8,23,24]. The variation of diode characteristics confirms the linear correlation between n and [25].…”

Section: Resultssupporting

confidence: 75%

“…In GaAs-based devices the performance has been experimentally shown to be affected to a greater extent by surface and interface defect density and also the series resistance [8]. According to Tung [9,10] it can also be explained in the chemical bonding picture, where the diode characteristics depend on the atomic structure of the MS interface.…”

Section: Introductionmentioning

confidence: 99%

“…Several researchers have studied the electrical characteristics of Au/n-GaAs Schottky diodes and have reported a strong dependence of diode characteristics on temperature [4,7,8,[11][12][13]. Kim et al [14] studied the temperature dependence of Au/n-GaAs I-V characteristics using a semi analytical model in the 83 -323 K temperature range.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes

Tunhuma

Auret

Legodi

et al. 2016

Physica B: Condensed Matter

View full text Add to dashboard Cite

In this study, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/n-GaAs Schottky diodes have been measured over a wide temperature range, 80 -480 K.The diodes were rectifying throughout the range and showed good thermal stability. Room temperature values for the ideality factor, I-V barrier height and C-V barrier height were found to be n = 1.10, = 0.85 eV and = 0.96 eV, respectively. increases and n decreases with an increase in temperature. We investigated the effect of elevated temperatures on the barrier height and ideality factor by measuring the diodes at a high temperature (annealing mode) then immediately afterwards measuring at room temperature (post annealing mode). The measurements indicate I-V characteristics that degrade permanently above 300 K. Permanent changes to the C-V characteristics were observed only above 400 K. We also noted a discrepancy in the C-V barrier height and carrier concentration between 340 and 400 K, which we attribute to the influence of the EL2 defect (positioned 0.83 eV below the conduction band minima) on the free carrier density. Consequently, we were able to fit the versus temperature curve into two regions with temperature coefficients -6.9×10 -4 eV/K and -2.2×10 -4 eV/K above and below 400 K.

show abstract

Section: Resultssupporting

confidence: 75%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes

Tunhuma

Auret

Legodi

et al. 2016

Physica B: Condensed Matter

View full text Add to dashboard Cite

show abstract

“…A similar trend were also observed by several authors [3,17,19,20]. The observed increase in barrier height with increase in temperature disagrees with the negative temperature coefficient of II-IV semiconductor material [29,30]. Several researchers have observed the same trend on various Schottky contacts [12,27,30,31] and they have explained it to be possibly related to the temperature-activated current transport of carriers across the MS interface.…”

Section: Methodssupporting

confidence: 75%

“…The observed increase in barrier height with increase in temperature disagrees with the negative temperature coefficient of II-IV semiconductor material [29,30]. Several researchers have observed the same trend on various Schottky contacts [12,27,30,31] and they have explained it to be possibly related to the temperature-activated current transport of carriers across the MS interface. These carriers at low temperatures are able to surmount the lower barriers through tunneling and therefore the current will be dominated by transport of charge carriers through the patches of lower SBH.…”

Section: Methodsmentioning

confidence: 87%

Temperature-dependent current–voltage characteristics of Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant

Mayimele

Diale

Mtangi

et al. 2015

Materials Science in Semiconductor Processing

View full text Add to dashboard Cite

We report on a systematic investigation of temperature dependent current-voltage (I-V) characteristics of Pd/ZnO Schottky barrier diodes in the 30-300 K temperature range. The ideality factor was observed to decrease with increase in temperature, whilst the barrier height increases with increase in temperature. The observed trend has been attributed to barrier inhomogeneities, which results in a distribution of barrier heights at the interface.

show abstract

Temperature and Voltage Effect on Barrier Height and Ideality Factor in Au/PVC + TCNQ/p‐Si Structures

et al. 2014

Self Cite

View full text Add to dashboard Cite

The forward bias current conduction mechanisms of Au/PVC + TCNQ/p-Si structures have been investigated in a wide temperature range of 120-420 K for various applied bias voltage. The analysis of the main electrical parameters such as zero-bias barrier height (BH) ( Bo ), ideality factor (n), and interface states (N ss ) was found strongly dependent on temperature and voltage. The obtained results show that, while Bo increases, n decreases with increasing temperature. The plot of app versus q/2kT was drawn to show a Gaussian distribution (GD) of the BHs, and this plot shows two distinct linear regions. The Bo and standard deviation (σ s ) values were found from the slope and intercept of these plots for two regions as 1.16 eV and 0.161 V for the first region and 0.71 eV and 0.093 V for the second region, respectively. Such behavior is typical of a double GD (DGD) of the BHs due to the BH inhomogeneities at the metal-semiconductor interface. The slope and intercept of the modified (ln(I 0 /T 2 ) -q 2 σ 0 2 /2k 2 T 2 ) versus q/kT plot gives the and¯ Bo and effective Richardson constant (A*) as 1.16 and 0.76 eV and 36.7 and 83.8 A/cm 2 K 2 , respectively. The value of the A* (36.7 A/cm 2 K 2 ) is very close to the theoretical value of 32 A/cm 2 K 2 for p-Si. In addition, to interrupt the voltage-dependent activation energy, the ln(I s /T 2 ) versus q/kT plot was drawn in the voltage range of 0-0.3 V in 0.05 V steps. All of experimental results confirmed that the BH or E a values depend on the temperature as well as bias voltages. C

show abstract

A detailed study on current–voltage characteristics of Au/n-GaAs in wide temperature range

Cited by 72 publications

References 40 publications

The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes

The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes

Temperature-dependent current–voltage characteristics of Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant

Temperature and Voltage Effect on Barrier Height and Ideality Factor in Au/PVC + TCNQ/p‐Si Structures

Contact Info

Product

Resources

About