A diffraction approach for the study of the mechanism of 3C to 6H transformation in SiC

Kabra, Vedant; Pandey, Dhananjai; Lele, S.

doi:10.1007/bf01114722

Cited by 19 publications

(26 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The diffraction peaks of the 6H form broadened with increasing temperature, especially at 1000°-1900°C, and then sharpened at 2500°C. This broadening is attributed to "nonrandom insertion of faults" during transformation of the 6H form to the other form, much the same as the transition of the 3C to the 6H form pointed out by Sebastion and Krishna 15 and Kabra et al 16 Those researchers suggested that diffusion of the diffraction peaks takes place during the process of transition, when stacking faults are introduced preferentially into the crystal. Therefore, a series of diffraction profiles shows an intermediate state, characterized by broad diffraction profiles, during transition from the 6H to the other more stable form, as a phenomenon before transition.…”

Section: Resultsmentioning

confidence: 86%

Phase Relationship between 3C‐ and 6H‐Silicon Carbide at High Pressure and High Temperature

Sugiyama¹,

Togaya²

2001

Journal of the American Ceramic Society

View full text Add to dashboard Cite

The phase relationship between 3C-and 6H-SiC is investigated in the pressure range 2.5-6.5 GPa and the temperature range 400°-2500°C, by analyzing recovered samples, using X-ray diffractometry and Raman-scattering techniques. The phase transition from 3C-to 6H-SiC occurs at 2200°C and 2.5 GPa. In the pressure range >4.5 GPa, 6H-SiC transforms to 3C-SiC at 2500°C, via an intermediate state, as indicated by broadening peaks in the X-ray diffraction profile. Thermodynamically, 3C-SiC appears to be the low-temperature stable form, and the temperature of transition to 6H-SiC, which is stable at high temperature, appears to increase with pressure.

show abstract

Section: Resultsmentioning

confidence: 86%

Phase Relationship between 3C‐ and 6H‐Silicon Carbide at High Pressure and High Temperature

Sugiyama¹,

Togaya²

2001

Journal of the American Ceramic Society

View full text Add to dashboard Cite

show abstract

“…Recently we developed a scattering model which allows to effectively fit experimental DXS curves. This model is very briefly recalled here (for more details, see [10,11]). The intensity distribution along the [10L] h row is written as follows :…”

Section: Simulation Proceduresmentioning

confidence: 99%

Diffuse X-ray scattering from partially transformed 3C–SiC single crystals

Dompoint¹,

Boulle²,

Galben-Sandulache³

et al. 2012

Nuclear Instruments and Methods in Physics Research Section B:

View full text Add to dashboard Cite

The 3C-6H polytypic transition in 3C-SiC single crystals is studied by means of diffuse X-ray scattering (DXS) coupled with numerical simulations. It is shown that the presence of spatially correlated stacking faults (characteristic of this type of restacking transition) gives rise to extended diffuse scattering in the reciprocal space perpendicularly to the fault plane. The simulation of the diffuse intensity allows to determine both the volume fraction of transformed material and the transformation level within these regions. It is further shown that the evolution with time and temperature of the transition implies the multiplication and glide of partial dislocations, the kinetics of which are quantified by means of DXS.

show abstract

“…The concept of non-random faulting applied to the study of the 3C-6H has been introduced in Ref. 16 where different transformation mechanisms have been investigated: the layer displacement mechanism where the re-stacking occurs by diffusional rearrangement, and a dislocation-based mechanism where the re-stacking occurs through the glide of partial dislocations 17 . We make use of this formalism in combination with the previous equation in order to determine the transformation mechanism as well as the transformation level.…”

Section: High Sfs Densitymentioning

confidence: 99%

Defects and Polytypism in SiC: The Role of Diffuse X-Ray Scattering

Boulle¹,

Dompoint²,

Galben-Sandulache³

et al. 2010

AIP Conference Proceedings

View full text Add to dashboard Cite

Stacking faults (SFs) and the 3C-6H polytypic transition in thick (001)-oriented 3C-SiC crystals are studied by means of diffuse X-ray scattering. The presence of SFs lying in the {111} planes gives rise to streaked reciprocal lattice points with the streaks being parallel to the <111> directions. In the case of low SF densities the defects are uncorrelated and the simulation of the diffuse intensity distribution allows to derive the SF density. In partially transformed crystals, the SFs are spatially correlated which gives rise to an intense and asymmetric diffuse scattering distribution. Its simulation allows to determine both the transformation mechanism and the transformation level.

show abstract

A diffraction approach for the study of the mechanism of 3C to 6H transformation in SiC

Cited by 19 publications

References 25 publications

Phase Relationship between 3C‐ and 6H‐Silicon Carbide at High Pressure and High Temperature

Phase Relationship between 3C‐ and 6H‐Silicon Carbide at High Pressure and High Temperature

Diffuse X-ray scattering from partially transformed 3C–SiC single crystals

Defects and Polytypism in SiC: The Role of Diffuse X-Ray Scattering

Contact Info

Product

Resources

About