A Digitally Controlled Fully Integrated Voltage Regulator With On-Die Solenoid Inductor With Planar Magnetic Core in 14-nm Tri-Gate CMOS

Krishnamurthy, Harish K.; Vaidya, Vaibhav; Kumar, Pankaj; Jain, Rachna; Weng, Sheldon; Kim, Stephen T.; Matthew, George E.; Desai, Nachiket; Liu, Xiaosen; Ravichandran, Krishnan; Tschanz, James; De, Vivek

doi:10.1109/jssc.2017.2759117

Cited by 48 publications

(23 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is one of the major challenges in FIVRs. For example, in Krishnamurthy et al, 18 the inductor loss is about 60% of the total power losses. As mentioned before, due to the dual‐path structure of the proposed FIVR, the average current flowing through the inductor is less than the load current, and therefore, the inductor power loss is decreased.…”

Section: Simulation Resultsmentioning

confidence: 99%

“…14 The cascode buck converter as a conventional topology is used which can be driven by voltages higher than the maximum allowable process voltage. 12,[15][16][17][18][19][20] Two added transistors in cascode structure increase the converter conduction losses, and thus, larger transistors should be used to mitigate these losses. Larger transistors would have higher switching losses which becomes significant at high frequencies.…”

Section: Introductionmentioning

confidence: 99%

“…In the proposed converter, the output voltage is determined by the switched-inductor stage and can be changed continuously. Since the performance of an on-chip switched-inductor voltage regulator is degraded due to low quality factor of the used on-chip inductor, 15,18,24 the proposed structure has two supply paths to the load. For a specific load current, dualpath structure reduces the inductor current and consequently decreases the inductor conduction loss.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Fully integrated switched‐inductor switched‐capacitor dual‐path DC–DC converter

Meshkat

Dehghani

Farzanehfard

2022

Circuit Theory & Apps

View full text Add to dashboard Cite

A fully integrated switched-inductor switched-capacitor (SISC) DC-DC converter is proposed. This converter is designed in such a way that the input voltage can be twice the process allowable voltage without damaging the on-chip transistors. To mitigate large series resistance of on-chip inductors as one of the main challenges in the switched-inductor power supply on chip, two solutions are proposed. By using analytical model of an on-chip inductor, optimal physical dimensions are designed to achieve the desired inductance with minimum series resistance in a small area. Along with the optimization, the dualpath structure of the proposed converter reduces series resistance losses of the on-chip inductor and increases the effective quality factor up to 7 times in duty cycle of 0.8. The proposed converter is implemented in 0.18 μm standard CMOS process. The circuit converts input voltage of 3.6-0.9 V at the load current of 125 mA with the efficiency of 72.8%. Efficiency enhancement factor reaches 72% at 600 mV output voltage. The achieved current density of the proposed converter is 333 mA/mm 2 . By calculating small signal model of the proposed converter and designing a suitable feedback loop, an appropriate transient behavior was provedcascode buck converter, fully integrated voltage regulator, high current density, high stepdown, inductor quality factor boosting, on-chip inductor optimum design

show abstract

Section: Simulation Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Fully integrated switched‐inductor switched‐capacitor dual‐path DC–DC converter

Meshkat

Dehghani

Farzanehfard

2022

Circuit Theory & Apps

View full text Add to dashboard Cite

show abstract

“…MEMS packaging technologies are adopted for PwrSoC integration as an alternative for common packaging architectures such as leadedframe power modules and PCB-embedded power modules. There are 2D/2.5D packaging architectures that use wire bonding 103 or flip-chip bonding techniques 104 . On the other hand, 3D packaging architectures refer to the vertical stacking of ICs using TSV-based Si interposers.…”

Section: Packaging Technology For Pwrsocmentioning

confidence: 99%

MEMS inductor fabrication and emerging applications in power electronics and neurotechnologies

et al. 2021

View full text Add to dashboard Cite

MEMS inductors are used in a wide range of applications in micro- and nanotechnology, including RF MEMS, sensors, power electronics, and Bio-MEMS. Fabrication technologies set the boundary conditions for inductor design and their electrical and mechanical performance. This review provides a comprehensive overview of state-of-the-art MEMS technologies for inductor fabrication, presents recent advances in 3D additive fabrication technologies, and discusses the challenges and opportunities of MEMS inductors for two emerging applications, namely, integrated power electronics and neurotechnologies. Among the four top-down MEMS fabrication approaches, 3D surface micromachining and through-substrate-via (TSV) fabrication technology have been intensively studied to fabricate 3D inductors such as solenoid and toroid in-substrate TSV inductors. While 3D inductors are preferred for their high-quality factor, high power density, and low parasitic capacitance, in-substrate TSV inductors offer an additional unique advantage for 3D system integration and efficient thermal dissipation. These features make in-substrate TSV inductors promising to achieve the ultimate goal of monolithically integrated power converters. From another perspective, 3D bottom-up additive techniques such as ice lithography have great potential for fabricating inductors with geometries and specifications that are very challenging to achieve with established MEMS technologies. Finally, we discuss inspiring and emerging research opportunities for MEMS inductors.

show abstract

“…With the development of electronic information industry, there was an increasing demand for the integration, miniaturization, and high frequency electromagnetic devices [1][2][3]. The compact inductors are indispensable passive component for radio frequency (RF) devices such as amplifiers, power transformers, and oscillators [4].…”

Section: Introductionmentioning

confidence: 99%

High-frequency Magnetic Properties of [Fe₈₀Ni₂₀-O/SiO₂]_n Multilayer Film Served as Magnetic Core of Solenoid Inductor

Wang

Xie

et al. 2018

IOP Conf. Ser.: Mater. Sci. Eng.

View full text Add to dashboard Cite

A Digitally Controlled Fully Integrated Voltage Regulator With On-Die Solenoid Inductor With Planar Magnetic Core in 14-nm Tri-Gate CMOS

Cited by 48 publications

References 6 publications

Fully integrated switched‐inductor switched‐capacitor dual‐path DC–DC converter

Fully integrated switched‐inductor switched‐capacitor dual‐path DC–DC converter

MEMS inductor fabrication and emerging applications in power electronics and neurotechnologies

High-frequency Magnetic Properties of [Fe₈₀Ni₂₀-O/SiO₂]_n Multilayer Film Served as Magnetic Core of Solenoid Inductor

Contact Info

Product

Resources

About

A Digitally Controlled Fully Integrated Voltage Regulator With On-Die Solenoid Inductor With Planar Magnetic Core in 14-nm Tri-Gate CMOS

Cited by 48 publications

References 6 publications

Fully integrated switched‐inductor switched‐capacitor dual‐path DC–DC converter

Fully integrated switched‐inductor switched‐capacitor dual‐path DC–DC converter

MEMS inductor fabrication and emerging applications in power electronics and neurotechnologies

High-frequency Magnetic Properties of [Fe80Ni20-O/SiO2]n Multilayer Film Served as Magnetic Core of Solenoid Inductor

Contact Info

Product

Resources

About

High-frequency Magnetic Properties of [Fe₈₀Ni₂₀-O/SiO₂]_n Multilayer Film Served as Magnetic Core of Solenoid Inductor