2004
DOI: 10.1063/1.1812584
|View full text |Cite
|
Sign up to set email alerts
|

A diodelike conduction model for the postbreakdown current in metal–oxide–semiconductor structures

Abstract: The postbreakdown current in metal-oxide-semiconductor structures with ultrathin silicon dioxide layers is investigated within the framework of a diodelike conduction model with high series resistance. The diodelike behavior is ascribed to the contact effect between the semiconductor electrodes, and the series resistance is mainly attributed to the crowding of the current lines or funneling of the energy states at the constriction which represents the breakdown path. It is shown how this model is able to captu… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
5
0

Year Published

2005
2005
2013
2013

Publication Types

Select...
6
2

Relationship

1
7

Authors

Journals

citations
Cited by 18 publications
(5 citation statements)
references
References 20 publications
0
5
0
Order By: Relevance
“…Electroforming and soft-breakdown can occur in layers, where materials can become bistable e.g. oxides [17,[28][29][30]. Also LiF/Polymer interfaces can become electrically bistable [15].…”
Section: Discussionmentioning
confidence: 99%
“…Electroforming and soft-breakdown can occur in layers, where materials can become bistable e.g. oxides [17,[28][29][30]. Also LiF/Polymer interfaces can become electrically bistable [15].…”
Section: Discussionmentioning
confidence: 99%
“…may all be modeled in this fashion. Exponential diode-like models with series resistance have also been used to characterize the postbreakdown behavior of metal-oxidesemiconductor structures (6).…”
Section: Introductionmentioning
confidence: 99%
“…4 Research has focused mainly on the pre-DB mechanism. 5,6 The post-DB conduction mechanisms 7,8 have received comparatively little attention. However, it has long been known that if excessive Joule heating is prevented, DB leads initially to bistable currentvoltage characteristics rather than directly to device failure.…”
mentioning
confidence: 99%