2006
DOI: 10.1016/j.jcp.2005.08.003
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A direct multigroup-WENO solver for the 2D non-stationary Boltzmann–Poisson system for GaAs devices: GaAs-MESFET

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Cited by 14 publications
(6 citation statements)
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“…where well accepted rules do not exist for DSMC. See also related work in [49]. We present in Figure 6.…”
Section: Semiconductor Device Simulationmentioning
confidence: 99%
“…where well accepted rules do not exist for DSMC. See also related work in [49]. We present in Figure 6.…”
Section: Semiconductor Device Simulationmentioning
confidence: 99%
“…(1)-(4). The advantages of fully deterministic schemes compared to Monte-Carlo solvers available can be summarized analogously to the case of semiclassical Boltzmann-Poisson solvers [12][13][14][23][24][25] as:…”
Section: Introductionmentioning
confidence: 99%
“…Four scattering mechanisms are regarded in our study: acoustic deformation potential scattering and nonpolar optical phonons, which are treated in the isotropic approximation (velocity randomizing), and polar optical phonons and impurity scattering, where the dependence on the angle between the initial and final wave vector is considered [8], [9]. Except for the nonpolar optical phonons, all the mechanism are intravalley scattering.…”
Section: Methodsmentioning
confidence: 99%
“…The lowly-doped structure contains three layers of 250nm length (total length: 750nm) [8]. The n + layers are doped with 2 × 10 17 cm −3 .…”
Section: B Device Simulationmentioning
confidence: 99%