2010
DOI: 10.1063/1.3337091
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A direct transfer of layer-area graphene

Abstract: A facile method is reported for the direct (polymer-free) transfer of layer-area graphene from metal growth substrates to selected target substrates. The direct route, by avoiding several wet chemical steps and accompanying mechanical stresses and contamination common to all presently reported layer-area graphene transfer methods, enables fabrication of layer-area graphene devices with unprecedented quality. To demonstrate, we directly transfer layer-area graphene from Cu growth substrates to holey amorphous c… Show more

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Cited by 363 publications
(350 citation statements)
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“…The thickness of the BN nanosheet was determined to be 7-8 nm (~20 layers) by atomic force microscopy (AFM) after a transfer to a silicon substrate with a 90 nm oxide layer (SiO 2 /Si) (see Supporting Information, Figure S1). [28] Thanks to BN's low absorption of visible light, the BN-covered Cu foil has a very similar metallic color to the bare Cu foil, as…”
Section: Resultsmentioning
confidence: 99%
“…The thickness of the BN nanosheet was determined to be 7-8 nm (~20 layers) by atomic force microscopy (AFM) after a transfer to a silicon substrate with a 90 nm oxide layer (SiO 2 /Si) (see Supporting Information, Figure S1). [28] Thanks to BN's low absorption of visible light, the BN-covered Cu foil has a very similar metallic color to the bare Cu foil, as…”
Section: Resultsmentioning
confidence: 99%
“…Using a direct transfer method 53 , the GO sheets were transferred onto Quantifoil TEM grids. However, after the transfer process onto a TEM grid, we frequently observed the formation of B10-100-nmsized holes in the GO sheets.…”
Section: Methodsmentioning
confidence: 99%
“…To prepare for the TEM samples, few-layer BN sheets exfoliated on SiO2/Si substrate were transferred onto Ni TEM grid with carbon film, using the process described in Ref [40]. The pentacene crystalline films were grown for 3 hours under the source temperature of 160°C, which ~5-10 layers were typically produced.…”
Section: Details Of Afm Tem Raman Polarization-dependent Absorptiomentioning
confidence: 99%