A distributed charge storage with GeO2 nanodots

Abstract

In this study, a distributed charge storage with GeO2 nanodots is demonstrated. The mean size and aerial density of the nanodots embedded in SiO2 are estimated to be about 5.5 nm and 4.3×1011 cm−2, respectively. The composition of the dots is also confirmed to be GeO2 by x-ray absorption near-edge structure analyses. A significant memory effect is observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window is estimated to ∼0.45 V. Also, a physical model is proposed to demonstrate the charge storage effect through the interfacial traps of GeO2 nanodots.

Morphology and crystal phase evolution of GeO2 in liquid phase deposition process

“…As this happens, nucleation and growth of the hexagonal GeO 2 phase start. The hexagonal GeO 2 phase is indeed observed using SEM and XRD after the LPD process proceeds for 2 h. We have studied the morphology evolution of hexagonal GeO 2 phases in the acid-induced LPD process [11]. It is found that a hexagonal prism with two hexagonal pyramids at both ends will slowly develop a truncated cube-like shape, and then a cube-like shape [22].…”

“…Recently much attention has been given to GeO 2 due to its potential applications in light emitting devices [1][2], infrared waveguide [3][4][5], catalyst [6,7], biomedicine [7,8], vacuum technique and piezoelectric devices [9][10][11]. Melting, sputtering deposition, chemical vapor deposition, flame hydrolysis, electrospinning, laser ablation, physical evaporation, thermal oxidation, reversed micelles and sol-gel method have been used to prepare the GeO 2 materials [12][13][14][15][16][17][18][19].…”

Metal nanocrystals as charge storage nodes for nonvolatile memory devices

“…Most studies have focused on the fabrication on Si and Ge nanocrystals in metal-oxidesemiconductor (MOS) structure [12][13][14][15][16][17][18][19][20]. In addition, atomicforce-microscopy (AFM) was utilized to inject charges in the nanocrystals [21][22][23].…”

Electrical Characteristics for Flash Memory With Germanium Nitride as the Charge-Trapping Layer

“…Although Ge-incorporated HfON has been proposed to enhance the charge-trapping capability for nonvolatile memory [20], most Ge-related materials for charge-trapping applications are pertinent to nanocrystal-based trapping media. Nanocrystal-based memory devices indeed exhibit prominent electrical performance [21]- [26]; however, controlling the size and uniformity of nanocrystals is still a challenge that needs to be overcome. Ge 3 N 4 , which was formed by ammonia (NH 3 ) plasma nitridation of an amorphous Ge film in this study, has demonstrated great potential for advanced flash memory application in terms of a large memory window, highspeed operation as well as robust endurance and satisfactory retention.…”