A Distributed Power Amplifier Design with a High Power Gain

Abstract

In this paper we present a simple while comprehensive analytical design procedure for distributed amplifiers. Distributed amplifiers are attractive for designers due to their wideband capability. When designing a distributed amplifier, the first question that comes to mind is how wide the bandwidth can be. This paper answers this question by using the self-matching and low-pass properties of a distributed amplifier. Self-matching property of a distributed power amplifier is an interesting point that distinguishes it from other types of power amplifiers that are usually based on input and output matching networks. Here the estimation of the bandwidth of a distributed amplifier structure is discussed. The equations that are used in this paper can bring good insight and they can assist designers. Furthermore, we have explained the frequency behavior of a tapered distributed amplifier analytically for the first time. In order to validate the approach presented here, we have used published designs including our previously published design as practical examples. The flowchart of the design procedure is also provided.

Design of a 0.8-2.2GHz ultra-wideband RF high power amplifier

“…The output matching of traditional distributed amplifiers is the same for each stage, so the transistors of each stage do not achieve the best output matching, and only the transistors of the last stage contribute the most to the output power [20] as a result, a non-uniform distributed structure that changes the size of the transistor and the tapering transmission line structure are produced to reduce the waste of output power [21,22].…”

Study of harmonic control power amplifier technology based on improved modeling of bondwire

“…In other works, some researchers have applied the bondwire model to the design of RF devices, [9][10][11][12][13][14] taking the design of a PA as an example, the bondwire is used to participate in signal transmission and forming matching networks in the PA design of each band. [15][16][17][18][19][20] The integration of these PAs include internal matching mode and MMIC. Although some models are reported to be applicable to 100 GHz, their accuracy cannot satisfy the PA designer's needs.…”

“…In other works, some researchers have applied the bondwire model to the design of RF devices, 9–14 taking the design of a PA as an example, the bondwire is used to participate in signal transmission and forming matching networks in the PA design of each band 15–20 . The integration of these PAs include internal matching mode and MMIC.…”