Perovskite solar cells (PSCs) have achieved an outstanding power conversion efficiency (PCE, up to 25.5%) due to the unique optoelectronic properties of perovskites, thus being comparable to the commercialized silicon-based solar cells (%26%). [1] Among the reported high-performance PSCs, most studies have focused on the traditional (ni-p) structures to improve the efficiency by optimizing cell architectures and perovskite and interfacial materials. The conventional n-i-p structure of a PSC features the formation of a perovskite film on the front electron transport layer of an n-type metal oxide such as TiO 2 and NiO x , requiring a high-temperature sintering process (up to 500 C), which greatly restricts the choice of substrate materials and also hinders the PSCs' applications. As an alternative, the inverted-type PSCs with p-i-n configuration have low-temperature processability (100 C) and have good commercial prospects in terms of ease of fabrication, utilization of flexible substrates, and potential usage for tandem devices. [2][3][4] For good performance of inverted p-i-n PSCs, holetransporting materials (HTMs) not only play an indispensable role in hole extraction and transfer from the perovskite layer to the electrode, but also have an important influence on the crystallization of the perovskite film, which could significantly enhance the optoelectronic properties and PCEs of the devices. [5][6][7] The most commonly used HTMs for inverted planar PSCs are poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and poly[bis(4-phenyl)(2,4,6-trimethylphenyl) amine] (PTAA). [8,9] Although PEDOT:PSS has high electrical conductivity and excellent solution processability, its acidic and