A dressed spin qubit in silicon

Laucht, Arne; Kalra, Rachpon; Simmons, Stephanie; Dehollain, Juan Pablo; Muhonen, Juha T.; Mohiyaddin, Fahd A.; Freer, Solomon; Hudson, Fay E.; Itoh, Kohei M.; Jamieson, David N.; McCallum, Jeffrey C.; Dzurak, A. S.; Morello, Andrea

doi:10.1038/nnano.2016.178

Cited by 89 publications

(78 citation statements)

References 55 publications

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“…Coherent dressing of a quantum two-level system has been demonstrated on a variety of systems, including atoms 17 , self-assembled quantum dots 18 , superconducting quantum bits 19 , NV centres in diamond [20][21][22] , and the electron spin in silicon 23 . In the dressed basis the eigenstates of the driven system are the entangled states of the photons and the quantum system, which gives rise to a new quantum bit with a level splitting defined by the electron spin Rabi frequency…”

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“…This level splitting is much smaller than the level splitting of the undressed electron spin ν e (= ν L ), which allows reaching the strong driving regime with moderate microwave powers 25,26 . Furthermore, the dressed qubit can be driven using frequency modulation (FM) of the MW source 23 , which does not add any heating to that of the MW power used for dressing. With this method, we obtain Rabi frequencies of the dressed qubit Ω Rρ equal to or even slightly larger than its transition frequency Ω R , which also implies that the dressed spin can be controlled equally fast as the bare electron spin.…”

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confidence: 99%

“…In our experiments, we frequency modulate ν MW with frequency ν FM = Ω R to resonantly drive the dressed spin and coherently control it 23 . Explicitly this means ∆ν(t) = ∆ν FM cos(2πν FM t + φ), where ∆ν FM is the modulation amplitude of the microwave drive, and φ is the phase of the FM modulation.…”

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Breaking the rotating wave approximation for a strongly driven dressed single-electron spin

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We investigate the dynamics of a strongly-driven, microwave-dressed, donor-bound electron spin qubit in silicon. A resonant oscillating magnetic field B1 is used to dress the electron spin and create a new quantum system with a level splitting proportional to B1. The dressed two-level system can then be driven by modulating the detuning ∆ν between the microwave source frequency νMW and the electron spin transition frequency νe at the frequency of the level splitting. The resulting dressed qubit Rabi frequency ΩRρ is defined by the modulation amplitude, which can be made comparable to the level splitting using frequency modulation on the microwave source. This allows us to investigate the regime where the rotating wave approximation breaks down, without requiring microwave power levels that would be incompatible with a cryogenic environment. We observe clear deviations from normal Rabi oscillations and can numerically simulate the time evolution of the states in excellent agreement with the experimental data.

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Breaking the rotating wave approximation for a strongly driven dressed single-electron spin

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“…Solid state spin qubits such as electron spin in quantum dots [1], nuclear spin of a donor [2], electron spin in SiGe heterostructures [3] or singlet-triplet states of two electron spins [4] are promising candidates for the creation of a quantum computer with desirable properties like scalability or long coherence times. Group IV semiconductors are expected to have long coherence times; the isotopic purification allows extraordinarily long coherence times in both silicon and germanium, making them two of the most promising hosts for spin-qubits [5][6][7]. In recent years, coherent manipulation of single electron spins has been achieved in both quantum dots and donors [8][9][10][11].…”

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Spin qubit manipulation of acceptor bound states in group IV quantum wells

Abadillo-Uriel

Calderón

2017

New J. Phys.

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The large spin-orbit coupling in the valence band of group IV semiconductors provides an electric field knob for spin-qubit manipulation. This fact can be exploited with acceptor based qubits. Spin manipulation of holes bound to acceptors in engineered SiGe quantum wells depends very strongly on the electric field applied and on the heterostructure parameters. The g-factor is enhanced by the Ge content and can be tuned by shifting the hole wave-function between the heterostructure constituent layers. The lack of inversion symmetry induced both by the quantum well and the electric fields together with the g-factor tunability allows the possibility of different qubit manipulation methods such as electron spin resonance, electric dipole spin resonance and g-tensor modulation resonance. Rabi frequencies up to hundreds of MHz can be achieved by electric field manipulation of heavy-hole qubits, and of the order of GHz with light-hole qubits.

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“…In this context, during the last decade, several materials have been proposed as quantum bits (qubits) ranging from defects in solids, [10][11][12] quantum dots, [13,14] photons, [15,16] impurities in solids, [17][18][19] superconducting systems, [20] trapped ions, [21] and molecules, [22] among others. In this context, during the last decade, several materials have been proposed as quantum bits (qubits) ranging from defects in solids, [10][11][12] quantum dots, [13,14] photons, [15,16] impurities in solids, [17][18][19] superconducting systems, [20] trapped ions, [21] and molecules, [22] among others.…”

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Synthetic Hilbert Space Engineering of Molecular Qudits: Isotopologue Chemistry

Wernsdorfer

Rüben

2019

Advanced Materials

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One of the most ambitious technological goals is the development of devices working under the laws of quantum mechanics. Among others, an important challenge to be resolved on the way to such breakthrough technology concerns the scalability of the available Hilbert space. Recently, proof‐of‐principle experiments were reported, in which the implementation of quantum algorithms (the Grover's search algorithm, iSWAP‐gate, etc.) in a single‐molecule nuclear spin qudit (with d = 4) known as 159TbPc2 was described, where the nuclear spins of lanthanides are used as a quantum register to execute simple quantum algorithms. In this progress report, the goal of linear and exponential up‐scalability of the available Hilbert space expressed by the qudit‐dimension “d” is addressed by synthesizing lanthanide metal complexes as quantum computing hardware. The synthesis of multinuclear large‐Hilbert‐space complexes has to be carried out under strict control of the nuclear spin degree of freedom leading to isotopologues, whereby electronic coupling between several nuclear spin units will exponentially extend the Hilbert space available for quantum information processing. Thus, improved multilevel spin qudits can be achieved that exhibit an exponentially scalable Hilbert space to enable high‐performance quantum computing and information storage.

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A dressed spin qubit in silicon

Cited by 89 publications

References 55 publications

Breaking the rotating wave approximation for a strongly driven dressed single-electron spin

Breaking the rotating wave approximation for a strongly driven dressed single-electron spin

Spin qubit manipulation of acceptor bound states in group IV quantum wells

Synthetic Hilbert Space Engineering of Molecular Qudits: Isotopologue Chemistry

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