A Dual‐Functional Perovskite‐Based Photodetector and Memristor for Visual Memory

Abstract

The imitation of human visual memory, which demands the multifunctional integration of light sensors similar to the eyes, and image memory, similar to the brain. Although humans have already implemented electronic devices with visual memory functions, these devices require a combination of various components and logical circuits. With the advancement of integrated circuits, the miniaturization and high integration of devices are an inevitable trend. Therefore, the combining of visual perception and high‐performance information storage capabilities into a single device to achieve visual memory remains a challenging. In this study, inspired by the function of human visual memory, we designed a dual‐functional perovskite‐based photodetector (PD) and memristor to realize visual perception and memory capacities. As a PD, it realized an ultra‐high self‐powered responsivity of 276 mAW−1, a high detectivity of 4.7×1011 Jones (530 nm; light intensities, 2.34 mWcm−2), and a high rectification ratio of ∼100 (± 2 V). As a memristor, an ultra‐high on/off ratio (∼105), an ultra‐low power consumption of 3×10−11 W, a low setting voltage (0.15 V), and a long retention time (>7000 s) were realized. Moreover, the dual‐functional device has the capacity to perceive and remember light paths and store data with good cyclic stability. Our device exhibits perceptual and cyclic erasable memory functions, which provide new opportunities for mimicking human visual memory in future multifunctional applications.This article is protected by copyright. All rights reserved

Multifunctional two-dimensional perovskite based solar cells for photodetectors and resistive switching

“…Thanks to the rich optoelectronic properties of perovskites, multifunctional devices based on them have gained significant attention and research. 16,17,45,46 Currently, individual multifunctional devices primarily focus on RS and detection functionalities. 42,43 Given that vertical-structured photovoltaic cells inherently serve as typical PD devices, these vertical-structured devices can integrate photovoltaic, detection, and RS functionalities.…”

“…12,13 There is growing interest in multifunctional devices that can replace multiple components with a single unit, offering space and weight savings for space-constrained applications while reducing energy consumption, aligning with the rising demand for miniaturized and intelligent devices. 14–16…”

Recent advances in 2D transition metal dichalcogenide-based photodetectors: a review

“…Fa Cao et al fabricated a dual-functional PD based on perovskites, which exhibits an ultrahigh detectivity of 4.7 × 10 11 Jones with a high responsivity of 276 mA W −1 , and can detect and recognize illumination paths and data storage with excellent cycling stability. 52 The UV photodetector based on organic materials (a responsivity of 45 mA W −1 under illumination of 250 nm) has the potential of UV flexible imaging, exhibiting high-resolution arrays reported by T Yan et al 53 In modern electronics and optoelectronics, wafer-scale processing or growth is crucial for the development of commercially viable applications of 2D materials. 54 Kang et al obtained monolayer WS 2 and MoS 2 wafer-scale films grown on silicon dioxide (SiO 2 )-insulating substrates through a metal–organic chemical vapor deposition (MOCVD) technique.…”

2D van der Waals Heterostructure with Tellurene Floating-Gate for Wide Range and Multi-Bit Optoelectronic Memory

“…24−26 Recently, black phosphorus (BP) and perovskite have been utilized in FG NVM to take advantage of their optoelectrical properties for OEM. 27 However, a low on/off switching ratio and instability in ambient condition are critical issues that limit their use as long-term working and reliable devices. 19,28,29 Considering the requirements of multifunction memory devices, a FG NVM technology that features a high on/off ratio, broad absorption spectrum, long data retention, and robust endurance is required to enhance the behavior of next-generation memory devices.…”

“…Hence, optoelectronic memory (OEM) based on the 2D van der Waal heterostructure (vdWh), which combines the advantages of their optoelectrical properties, offers a promising solution for conventional FG NVMs. − Graphene has been employed as a potential FG layer for NVM due to its high carrier mobility and charge-trapping capability. However, its zero band gap hinders electrical–optical writing of the memory device, which can effectively reduce power consumption. − Recently, black phosphorus (BP) and perovskite have been utilized in FG NVM to take advantage of their optoelectrical properties for OEM . However, a low on/off switching ratio and instability in ambient condition are critical issues that limit their use as long-term working and reliable devices. ,, Considering the requirements of multifunction memory devices, a FG NVM technology that features a high on/off ratio, broad absorption spectrum, long data retention, and robust endurance is required to enhance the behavior of next-generation memory devices.…”