A dual-functional Ta/TaO<sub>x</sub>/Ru device with both nonlinear selector and resistive switching behaviors

Wang, Rui; Shi, Tao; Zhang, Xumeng; Wu, Zuheng; Liu, Qi

doi:10.1039/d1ra02350k

Cited by 7 publications

(6 citation statements)

References 35 publications

(33 reference statements)

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“…This behavior is thought to suggest that the diameter of the filamentary structure increases with an increasing CCL, which results in the transition of VS and NVS behaviors. A similar phenomenon has been reported in continuous oxide thin films. , …”

Section: Resultssupporting

confidence: 85%

“…A similar phenomenon has been reported in continuous oxide thin films. 21,22 The I−V curves show in Figure 2a a higher off current in devices with Pt as electrodes as compared to the devices with Au as electrodes. A higher off current leads to a smaller selectivity, which is due to the lower metal work function of Pt (∼4.6 eV) than that of Au (5.3 eV).…”

Section: ■ Results and Discussionmentioning

confidence: 97%

“…During the cycling, the device state will return to the HRS while finishing the cycle of a forward and a backward voltage sweep. Compared to the typical selector devices based on Mott-transition materials, − the helical structured selectors have a significant current reduction for 3 orders of magnitude (i.e., the on current is ∼10 –5 A and the off current is ∼10 –8 A). The I – V curves of the Au/h-WO x /SiO x /Au device are with the off-state current of 10 –7 A at 0.5 V (blue curve: median of 50 cycles).…”

Section: Resultsmentioning

confidence: 97%

“…Table 1 shows the benchmark for the current development of the volatile and nonvolatile switching behaviors in the metal−insulator−metal (MIM) structure with varied deposition methods of active layer formation such as plasma-enhanced chemical vapor deposition (PECVD), 30 radio frequency (RF) sputtering, 31 and e-beam evaporation. 21 The switching voltages vary with the different combinations of active layers and electrodes.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Nano Helical-Shaped Dual-Functional Resistive Memory for Low-Power Crossbar Array Application

Chen

Sarkar

Gibbs

et al. 2022

ACS Appl. Eng. Mater.

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The dual functions of nano helical-shaped memory have been presented: i.e., nonvolatile switching (NVS) and volatile switching (VS). The selectivity of volatile switching devices can be integrated as a selector device in a memory application. Meanwhile, the device’s nonvolatile switching behavior has been shown as a self-selective characteristic for suppressing the sneak path current in the high-density memory array without switch device integration. The highly CMOS compatible materials have been investigated and presented in this work as candidates for embedded memory and selectors in future computational applications.

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Section: Resultssupporting

confidence: 85%

Section: ■ Results and Discussionmentioning

confidence: 97%

Section: Resultsmentioning

confidence: 97%

Section: ■ Results and Discussionmentioning

confidence: 99%

See 2 more Smart Citations

Nano Helical-Shaped Dual-Functional Resistive Memory for Low-Power Crossbar Array Application

Chen

Sarkar

Gibbs

et al. 2022

ACS Appl. Eng. Mater.

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“…A high nonlinearity of >10 4 was reported on TiO x [8][9][10][11], TaO x [5,12,13] and Co 3 O 4 -based [14] tunnelling selectors. Besides that, an amorphous ITZO-based selector was shown to achieve ∼900 nonlinearity in the V/3 scheme after oxygen plasma treatment [15].…”

Section: Introductionmentioning

confidence: 99%

The impact of oxygen vacancy defect density on the nonlinearity and short-term plasticity of TiO₂-based exponential selector

et al. 2023

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The readout margin of the one selector-one RRAM (1S1R) crossbar array architecture is strongly dependent on the nonlinearity of the selector device. In this work, we demonstrated that the nonlinearity of Pt/TiO2/Pt exponential selectors increases with decreasing oxygen vacancy defect density. The defect density is controlled by modulating the sputtering pressure in the oxide deposition process. Our results reveal that the dominant conduction mechanisms of the Pt/TiO2/Pt structure transit from Schottky emission to Poole-Frenkel emission with the increase of sputtering pressure. Such transition is attributed to the rise of oxygen vacancy concentration. In addition, the short-term plasticity feature of the Pt/TiO2/Pt selector is shown to be enhanced with a lower defect density. These results suggest that low defect density is necessary for improved exponential selector performances.

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Composition‐Graded Nitride Ferroelectrics Based Multi‐Level Non‐Volatile Memory for Neuromorphic Computing

Wang,

Ye,

et al. 2024

Advanced Materials

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Multi‐level non‐volatile ferroelectric memories are emerging as promising candidates for data storage and neuromorphic computing applications, due to the enhancement of storage density and the reduction of energy and space consumption. Traditional multi‐level operations are achieved by utilizing intermediary polarization states, which exhibit an unpredictable ferroelectric domain switching nature, leading to unstable multi‐level memory. In this study, a unique approach of composition‐graded ferroelectric ScAlN to achieve tunable operating voltage in a wide range and attain precise control of domain switching and stable multi‐level memory is proposed. This non‐volatile memory supports multi‐level storage up to 7‐bit capacities, and exhibits enhanced performance compared to the uniform composition device, showing one order of magnitude higher ON/OFF ratio, 30% reduced working voltage, and up to 50% enhanced tuning window of operating voltage. Finally, the emulation of long‐term plasticity and linear weight update akin to biological synapse with high uniformity and reliability are demonstrated. The proposed composition‐grading architecture offers new opportunities for next‐generation multi‐level ferroelectric memories, paving the way for advanced hybrid integration in multifunctional computing systems.

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A dual-functional Ta/TaO_x/Ru device with both nonlinear selector and resistive switching behaviors

Abstract: We presented a dual-functional Ta/TaOx/Ru device with both highly uniform nonlinear selector and stable resistive switching behaviors.

Cited by 7 publications

References 35 publications

Nano Helical-Shaped Dual-Functional Resistive Memory for Low-Power Crossbar Array Application

Nano Helical-Shaped Dual-Functional Resistive Memory for Low-Power Crossbar Array Application

The impact of oxygen vacancy defect density on the nonlinearity and short-term plasticity of TiO₂-based exponential selector

Composition‐Graded Nitride Ferroelectrics Based Multi‐Level Non‐Volatile Memory for Neuromorphic Computing

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A dual-functional Ta/TaOx/Ru device with both nonlinear selector and resistive switching behaviors

Abstract: We presented a dual-functional Ta/TaOx/Ru device with both highly uniform nonlinear selector and stable resistive switching behaviors.

Cited by 7 publications

References 35 publications

Nano Helical-Shaped Dual-Functional Resistive Memory for Low-Power Crossbar Array Application

Nano Helical-Shaped Dual-Functional Resistive Memory for Low-Power Crossbar Array Application

The impact of oxygen vacancy defect density on the nonlinearity and short-term plasticity of TiO2-based exponential selector

Composition‐Graded Nitride Ferroelectrics Based Multi‐Level Non‐Volatile Memory for Neuromorphic Computing

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A dual-functional Ta/TaO_x/Ru device with both nonlinear selector and resistive switching behaviors

The impact of oxygen vacancy defect density on the nonlinearity and short-term plasticity of TiO₂-based exponential selector