2020
DOI: 10.1109/tmtt.2020.2970913
|View full text |Cite
|
Sign up to set email alerts
|

A Dual-Mode Nested Rectifier for Ambient Wireless Powering in CMOS Technology

Abstract: This paper proposes a dual-mode nested RF rectifier for ambient wireless powering. The proposed architecture utilizes a dual-mode nested feedback circuit to enhance the conductivity of the rectifier at low-power while reducing the reverse leakage current at high-power by generating supply voltages at the gates of the PMOS rectifying transistors. The proposed rectifier is fabricated in 65 nm CMOS technology and occupies an area of 6480 µm 2. The measurement results show a peak power conversion efficiency of 86%… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
16
0

Year Published

2020
2020
2023
2023

Publication Types

Select...
6
1
1

Relationship

2
6

Authors

Journals

citations
Cited by 23 publications
(16 citation statements)
references
References 46 publications
0
16
0
Order By: Relevance
“…It has a compact and small silicon area of 0.0093 mm 2 . In addition, it has a better sensitivity and dynamic range than the voltagethreshold-compensated, DM nested, and adaptive rectifiers [ 12 , 13 , 14 ]. Compared to the low power performance, the proposed design offers the best peak PCE at −35 dBm of 25.5%.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…It has a compact and small silicon area of 0.0093 mm 2 . In addition, it has a better sensitivity and dynamic range than the voltagethreshold-compensated, DM nested, and adaptive rectifiers [ 12 , 13 , 14 ]. Compared to the low power performance, the proposed design offers the best peak PCE at −35 dBm of 25.5%.…”
Section: Resultsmentioning
confidence: 99%
“…Internal threshold-voltage compensation of the rectifying transistors is introduced in [ 12 ] to increase the harvested power and reduce the leakage current; however, it suffers from poor sensitivity and limited RF input power range. The authors of [ 13 ] propose a dual-mode nested feedback circuit to lower the effective threshold voltage of the rectifier and to minimize the reverse leakage current. However, the proposed design increases the circuit complexity and parasitic elements, which degrades the performance of the rectifier at the UHF.…”
Section: Introductionmentioning
confidence: 99%
“…Finally, it is key to note that while the proposed RFID sensor achieves a state-of-the-art wireless read-range compared to most reported RFID sensors, the read-range is limited by the tag's turn-on threshold (−21 dBm) and the reader's sensitivity (−74 dBm). For example, a higher sensitivity reader such as [32] would enable the proposed RFID ice sensor to be interrogated at ranges in excess of 20 m. Furthermore, recent advances in CMOS rectifiers demonstrating high RF-DC power conversion efficiencies as low as −30 dBm [33] will enable future RFID ICs to operate with a much higher sensitivity, where the tag will require less than −30 dBm of RF power to report its ID to the reader.…”
Section: Comparison With Other Ice Sensing Approachesmentioning
confidence: 99%
“…Therefore, solutions on this way can be categorized based on the adopted strategy to modulate turn-on instant and conduction angle. As an example, some works introduced architectures where auxiliary delay cells are inserted with the aim to adjust the times when the MOSFET have to switch from cut-off to conduction, and vice-versa [36]. Similar effect can be obtained by acting on the effective threshold of the comparator.…”
Section: The State-of-the-art Of Ac-dc Convertersmentioning
confidence: 99%