2020
DOI: 10.4218/etrij.2020-0121
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A dual‐path high linear amplifier for carrier aggregation

Abstract: A 40 nm complementary metal oxide semiconductor carrier-aggregated drive amplifier with high linearity is presented for sub-GHz Internet of Things applications. The proposed drive amplifier consists of two high linear amplifiers, which are composed of five differential cascode cells. Carrier aggregation can be achieved by switching on both the driver amplifiers simultaneously and combining the two independent signals in the current mode. The common gate bias of the cascode cells is selected to maximize the out… Show more

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