A Dual-Point Technique for the Entire I_D–V_G Characterization Into Subthreshold Region Under Random Telegraph Noise Condition

Abstract

A simple Dual-Point technique to measure the entire transfer characteristics (ID-VG) down to sub-threshold region in the nano-scaled MOSFET under Random Telegraph Noise (RTN) condition with either capturing or emitting one elementary charge by a trap in the gate dielectric is proposed. Its compatibility with the commercial semiconductor analyzer makes it a readily-usable tool for future RTN study. In this work, we use this technique to explore the VG dependence of RTN induced by a single trapped carrier in both n-and p-FETs.

On the Accuracy in Modeling the Statistical Distribution of Random Telegraph Noise Amplitude

“…For RTN tests, Hidden Markov Method [13] and Factorial HMM [14]- [15] has been used, when both the RTN amplitude and time constants are needed. The time-lag plot has been often used to measure the RTN amplitude [35]. Similar to the NBTI measurement [28], [34], we measured the RTN amplitude directly from the step-changes in Id in this work.…”

Dual-Point Technique for Multi-Trap RTN Signal Extraction

“…The transfer curve agrees well with the result measured by sweeping voltage in a device without RTN traps. In the current (at VGH) versus current (at VGL) plot, the centroid identification of the discrete data extracted by K-means clustering algorithm in the previous study [12], which represents the currents measured with a single trap in both charged and empty state. However, some errors might occur for a complex RTN signal in the clustering process, in which it is trying to separate the scattered points with equal variance and minimized distance.…”

“…When it comes to a fast-switching RTN trap, an oscilloscope-based system is adopted for fastmeasurement of the VG dependent RTN magnitudes, which is equipped with a dedicated configuration for reducing the background noise disturbance and increasing measurement accuracy [11]. For obtaining an accurate prediction of RTN-induced degradation, we reported a straightforward dual-point method for characterizing a trapped carrier in both n-and p-FETs [12].…”