A Dual Power Mode GaN Doherty Power Amplifier Based on Cascode Transistors

Ma, Mingming; You, Fei; You, Guanxiong; Shen, Ce; Xiao, Zehua; Wu, Wang; Chen, Yin; Wang, Yu; Tao, Hongqi; Qian, Ting; Guo, Runnan; Zhang, Bin; Wu, Tao; He, Songbai

doi:10.1109/lmwc.2021.3131172

Cited by 4 publications

(1 citation statement)

References 11 publications

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“…However, the uneven power splitting reduces the input power to carrier PA, resulting in a lower PBO efficiency. While the larger periphery peaking transistor will reduce the gain and cause higher loss [24,25]. To solve this problem, in this letter, we presents an ultrawideband enhanced load modulation technique to improve the PAE of the DPA.…”

Section: Introductionmentioning

confidence: 99%

A 4.3-5.6GHz ultra-wideband 10-W GaN Doherty power amplifier with enhanced load modulation bandwidth extension technique

Yang,

Gao,

Cui

et al. 2024

IEICE Electron. Express

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In this paper, a design methodology of a novel ultrawideband (UWB) Doherty power amplifier (DPA) monolithic microwave integrated circuit (MMIC) fabricated in a 0.25 µm GaN-HEMT process is presented. To improve the saturated and 6-dB backoff efficiency of the DPA, an ultra-wideband enhanced load modulation technique is presented. A dual-frequency output impedance transformer (OIT) of the peaking amplifier is proposed to extend the enhanced load-modulation bandwidth. For verification, an ultra-wideband high efficiency DPA working over 4.3-5.6 GHz has been designed and fabricated. The measurement results show that the DPA exhibits a small-signal gain of 12.2-14.5 dB, an output power of 39.5-41 dBm, a 6-dB back-off power added efficiency (PAE) of 40.2%-47.4%, and a saturated PAE of 47%-54.6% over the entire band. The proposed DPA demonstrates the highest saturated and 6-dB back-off PAE among published broadband GaN MMIC DPAs operating in similar bandwidth.

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Section: Introductionmentioning

confidence: 99%

A 4.3-5.6GHz ultra-wideband 10-W GaN Doherty power amplifier with enhanced load modulation bandwidth extension technique

Yang,

Gao,

Cui

et al. 2024

IEICE Electron. Express

View full text Add to dashboard Cite

show abstract

A X-band Dual-Power Mode Power Amplifier with Duality Impedance Matching Network

Zhang,

Ma,

Tao

et al. 2024

2024 IEEE MTT-S International Wireless Symposium (IWS)

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Analysis of DC negative feedback mechanism in stacked power amplifiers

He,

Fang,

Zhong

et al. 2023

IEICE Electron. Express

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Transistor stacking is a promising technique to increase the working voltage and output power of power amplifiers (PAs). A DC negative feedback mechanism in stacked PAs is analyzed and verified through measurement in this paper. This negative feedback mechanism ensures the stability of stacked PAs at DC conditions. Based on the analysis of this mechanism, the DC biasing procedure of stacked PAs is also analyzed in this paper. Finally, an experiment is performed to verify our analysis. The results of this paper prove the feasibility and stability of the stacked PA.

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A Dual Power Mode GaN Doherty Power Amplifier Based on Cascode Transistors

Cited by 4 publications

References 11 publications

A 4.3-5.6GHz ultra-wideband 10-W GaN Doherty power amplifier with enhanced load modulation bandwidth extension technique

A 4.3-5.6GHz ultra-wideband 10-W GaN Doherty power amplifier with enhanced load modulation bandwidth extension technique

A X-band Dual-Power Mode Power Amplifier with Duality Impedance Matching Network

Analysis of DC negative feedback mechanism in stacked power amplifiers

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