Proceedings of the 36th Annual International Symposium on Computer Architecture 2009
DOI: 10.1145/1555754.1555759
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A durable and energy efficient main memory using phase change memory technology

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Cited by 713 publications
(384 citation statements)
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“…The phase change in GST can be achieved by heating a region of phase change material to a high temperature threshold using electrical-pulse generated Joule heat [5]. As shown in Fig.…”
Section: Phase Change Memory (Pcm)mentioning
confidence: 99%
See 1 more Smart Citation
“…The phase change in GST can be achieved by heating a region of phase change material to a high temperature threshold using electrical-pulse generated Joule heat [5]. As shown in Fig.…”
Section: Phase Change Memory (Pcm)mentioning
confidence: 99%
“…Several techniques have been proposed to reduce write activities of PCM including differential write [5], compression [11,12], Flip-N-Write [13], and row-buffer locality-aware data placement [14]. Zhou et al [5] proposed a set of techniques, such as redundant bit removal and row shifting, to prolong the lifetime of PCMbased main memory.…”
Section: Related Workmentioning
confidence: 99%
“…Their design results in up to 3× speedup. Another study by Zhou et al [65] tackled the same problem with a different architecture design. They proposed a 3D die stacked chip multiprocessor design which deploys processors and the main memory in the same chip.…”
Section: Main Memory Design With Nvmsmentioning
confidence: 99%
“…In large systems, a memory system is one of the major sources of energy consumption. Using non-volatile random access memory (NVRAM) in the memory system creates much attention recently because NVRAMs consume zero leakage power in memory cells [1]. Phase change memory (PCM) is one of the most promising technologies for the NVRAM based memory system.…”
Section: Introductionmentioning
confidence: 99%
“…Phase change memory (PCM) is one of the most promising technologies for the NVRAM based memory system. However, PCM has write latencies roughly 6-10 times slower than that of DRAM [1,2]. Moreover, its lifetime is much shorter than DRAM due to the limited number of write operations allowed to each PCM cell [3].…”
Section: Introductionmentioning
confidence: 99%