A dynamic average model for the body effect in ion implanted short channel (L = 1µm) MOSFET's

Surface-potential-based compact modeling of dynamically depleted SOI MOSFETs

“…As all modern compact models, PSP-SOI DD is charge based in order to preserve charge conservation [32]. Hence, it is a common practice to evaluate the model accuracy in terms of C(V) characteristics which are more sensitive than terminal charges to any potential problems in model formulation.…”

Simulation of pulse responses of lithium salt‐doped poly ethyleneoxide

“…Therefore, simulation methods incorporating the primary interactions and physical processes are of great importance because the underlying forces and processes directly influence the electrical properties of the material. The macroscopical distribution of ions is another physical parameter which in unaccounted in the previously mentioned studies, but is vital to characterizing the system, as the doping speed is determined by the distribution of the implanted charge . The time‐dependent distribution of ions in PEO controls the time‐dependent speed of dynamic doping.…”

“…The macroscopical distribution of ions is another physical parameter which in unaccounted in the previously mentioned studies, but is vital to characterizing the system, as the doping speed is determined by the distribution of the implanted charge. 21 The time-dependent distribution of ions in PEO controls the time-dependent speed of dynamic doping. In this paper, we report a physical model to describe the ion-ion and ionpolymer force in lithium salt-PEO complexes.…”