A facile and reproducible synthesis of non-polar ZnO homojunction with enlarged rectification rate and colorful light emission

Qi, Lin; Chai, Zhaoyuan; Yang, Haw; Shahzad, M. Babar; Qi, Yang

doi:10.1016/j.jallcom.2019.04.109

Cited by 11 publications

(1 citation statement)

References 44 publications

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“…Those excellent physical and chemical properties are expected to be brighter than the current state-of-the-art GaN-based photonic device for the near UV and UV light emitting diode (LED) applications. Currently, ZnO-based homojunction diodes are fabricated for the photodetector (PD) or LED applications [7][8][9][10][11]. Quality and stable n-and p-type ZnO semiconductors as well as engineer their interfacial property are essential to achieve the ZnO-based homojunction diode.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of the near-band-edge electroluminescence from the active ZnO layer in the ZnO/GaN-based light emitting diodes using AlN-ZnO/ZnO/AlN-ZnO double heterojunction structure

Huang¹,

You²,

Yang³

et al. 2021

Mater. Res. Express

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In this work, an AlN-ZnO/ZnO/AlN-ZnO double heterojunction (DH) structure prepared using the cosputtering technology was deposited onto the p-type GaN epitaxial layer. The indiffusion of the oxygen atoms to the p-GaN epilayer was obstructed as the cosputtered AlN-ZnO film inset between n-ZnO/p-GaN interface. The near-ultraviolet (UV) emission from this ZnO/GaN-based light emitting diode (LED) was greatly improved as compared to an n-type ZnO film directly deposited onto the p-GaN epilayer. Meanwhile, the native defects in the n-ZnO layer associated with the green luminescence was less likely to form while it was sandwiched by the cosputtered AlN-ZnO film. As the thickness of the active n-ZnO layer in the DH structure reached 10 nm, the near-band-edge (NBE) emission became the predominated luminescence over the resulting LED spectrum.

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