A facile hot plate annealing at low temperature of Pb(Zr0.52Ti0.48)O3 thin films by sol–gel method and their ferroelectric properties

Wang, X. W.; Sun, Li; Shi, Xue; Peng, Yinghua; Hu, Yidan; Guo, Xueqiang; Zhang, Y. Y.; Guo, Yuming; Zhao, Wenbo; Shao, E. Z.

doi:10.1007/s10854-018-8535-0

Cited by 11 publications

(4 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In Fig. 6, we further compare the E g and P r of the KNLNST+1.3% Fe 2 O 3 ceramics fabricated in our work with those of the ferroelectric materials reported in the literature [6,9,14,[16][17][18]34,35,[37][38][39][40][41][42][43][44][45][46][47][48][49][50][51][52][53][54][55][56]. The detailed data for these materials are summarized in Table 1.…”

Section: Resultsmentioning

confidence: 83%

Bandgap narrowing and polarization enhancement in (K,Na,Li)(Nb,Sb,Ta)O ₃+ x% Fe ₂O ₃ lead-free ceramics for photovoltaic applications

Chen¹,

Mao²,

Wang³

et al. 2023

Journal of Advanced Ceramics

View full text Add to dashboard Cite

The need for ferroelectric materials with both narrow bandgaps (E g ) and large remanent polarization (P r ) remains a key challenge to the development of high-efficiency ferroelectric photovoltaic (FPV) devices. In this work, [(K 0.43 Na 0.57 ) 0.94 Li 0.06 ][(Nb 0.94 Sb 0.06 ) 0.95 Ta 0.05 ]O 3 (KNLNST)-based lead-free ceramics with narrow E g and large P r are obtained via Fe 2 O 3 doping. By optimizing the level of Fe 2 O 3 doping, a KNLNST+1.3% Fe 2 O 3 ceramic is fabricated that simultaneously possesses a narrow E g of 1.74 eV and a large P r of 27.05 μC/cm 2 . These values are much superior to those of undoped KNLNST ceramics (E g = 3.1 eV and P r = 17.73 μC/cm 2 ). While the large P r stems from the increment of the volume ratio between the orthorhombic and tetragonal phases (V O /V T ) in KNLNST ceramics by proper amount of Fe 3+ doping, the narrow E g is attributed to the coupling interaction between the Fe 3+ dopants and the B-site Sb 3+ host ions. Moreover, a switchable photovoltaic effect caused by the ferroelectric depolarization electric field (E dp ) is observed in the KNLNST+1.3% Fe 2 O 3 ceramic-based device. Thanks to the narrower E g and larger P r of the doped ceramic, the photovoltaic performance of the corresponding device (open-circuit voltage (V oc ) = −5.28 V and short-circuit current density (J sc ) = 0.051 μA/cm 2 ) under a downward poling state is significantly superior to that of an undoped KNLNST-based device (V oc = −0.46 V and J sc = 0.039 μA/cm 2 ). This work offers a feasible approach to developing ferroelectric materials with narrow bandgaps and large P r for photovoltaic applications.

show abstract

Section: Resultsmentioning

confidence: 83%

Bandgap narrowing and polarization enhancement in (K,Na,Li)(Nb,Sb,Ta)O ₃+ x% Fe ₂O ₃ lead-free ceramics for photovoltaic applications

Chen¹,

Mao²,

Wang³

et al. 2023

Journal of Advanced Ceramics

View full text Add to dashboard Cite

show abstract

“…The dielectric constant of the multilayer film with PZT in the perovskite phase was higher than that of films in the pyrochlore phase or the amorphous phase, and the reason for the difference of the dielectric constant in the multilayer film was the difference of dielectric constant for the PZT films with different phases [19]. Perovskite PZT had the ferroelectric domains with the same polarization direction, which is conducive to increasing the dielectric constant [40]. Therefore, the dielectric constant of the films annealed at 650 °C is the higher than that of films annealed at other temperatures.…”

Section: Dielectric and Leakage Current Density Propertiesmentioning

confidence: 98%

Improved electrical properties in PZT/PZ thin films by adjusting annealing temperature

Yang,

Chen,

Hou

et al. 2024

Phys. Scr.

Self Cite

View full text Add to dashboard Cite

In this study, PbZr0.52Ti0.48O3/PbZrO3 (PZT/PZ) multilayer films were prepared on SiO2/Si substrate buffered with LaNiO3 (LNO) thin films, and then annealed at different temperatures by rapid thermal annealing (RTA) technology. The phase structures, microstructures, and electrical properties of the obtained PZT/PZ multilayer films were studied. According to the results of XRD and SEM, it was found that the PZ films with perovskite phase were obtained by annealing at 650 °C firstly. The PZT films on crystallized PZ films were in amorphous phase after annealing at 450 °C, in pyrochlore phase after annealing at 550 °C, and finally in perovskite phase at annealing temperature higher than 600 °C. The multilayer films with the PZT films annealed at 550 °C exhibited linear hysteresis loops, and such films showed the enhanced energy storage density of 31.6 J cm−3 and the energy storage efficiency of 66.9% at a high breakdown field strength of 2475 kV cm−1. The experimental results proved that the phase structure of the PZT/PZ multilayer films can be regulated by different annealing temperatures, which could further enhance the energy storage performance of the PZT/PZ multilayer films.

show abstract

“…  is the difference between the linear thermal expansion coefficient of the substrate and the film [10].…”

Section: Preparation Of Vanadium Dioxidementioning

confidence: 99%

High Thermal Sensitivity Performance of Ferroelectric Vanadium Oxide Hybrid Process in Thermal Imaging Monitoring

2020

IJBDIT

View full text Add to dashboard Cite

Infrared focal plane array technology is a detector manufacturing technology that integrates a two-dimensional detector array on a focal plane with a multiplexed readout circuit. This research mainly discusses the high thermal sensitivity performance of the ferroelectric vanadium oxide hybrid process in thermal imaging monitoring. The choice of vanadium oxide as the material for the microbolometer is due to its high electrical resistivity, high electrical resistivity, easy manufacturing, etc., especially compatibility with silicon technology, easy mass production and low cost. In this study, a direct current magnetron sputtering technique was used to prepare undoped and Fe-doped vanadium oxide films on a glass substrate. By controlling the process parameters of magnetron sputtering, the purpose of controlling the square resistance value and resistance temperature sensitivity of the film is achieved. The vanadium target is a disc of metallic vanadium with a purity of 99.99%, a diameter of 80 mm, and a thickness of 4 mm. The specification of the patch used for doping is an Fe sheet with 99.99% purity and a size of 2mmx2.5mmx1mm. Place Fe flakes on the vanadium target, and control the concentration of doped Fe by the number of Fe flakes placed. In order to obtain high performance, the thermal array should be packaged in a vacuum envelope with an infrared emission window. Sensitive elements should not be connected to the sensitive elements of neighboring pixels to avoid thermal diffusion and loss of image resolution. When the rapid heat treatment temperature is increased to 500℃, the binding energy of the characteristic peak of V(2p3/2) drops to 516.03eV, which is in the range of VO2 binding energy (515.7-516.2eV). This research will promote the application of VO2 in thermal imaging monitoring.

show abstract

A facile hot plate annealing at low temperature of Pb(Zr0.52Ti0.48)O3 thin films by sol–gel method and their ferroelectric properties

Cited by 11 publications

References 36 publications

Bandgap narrowing and polarization enhancement in (K,Na,Li)(Nb,Sb,Ta)O ₃+ x% Fe ₂O ₃ lead-free ceramics for photovoltaic applications

Bandgap narrowing and polarization enhancement in (K,Na,Li)(Nb,Sb,Ta)O ₃+ x% Fe ₂O ₃ lead-free ceramics for photovoltaic applications

Improved electrical properties in PZT/PZ thin films by adjusting annealing temperature

High Thermal Sensitivity Performance of Ferroelectric Vanadium Oxide Hybrid Process in Thermal Imaging Monitoring

Contact Info

Product

Resources

About

A facile hot plate annealing at low temperature of Pb(Zr0.52Ti0.48)O3 thin films by sol–gel method and their ferroelectric properties

Cited by 11 publications

References 36 publications

Bandgap narrowing and polarization enhancement in (K,Na,Li)(Nb,Sb,Ta)O 3+ x% Fe 2O 3 lead-free ceramics for photovoltaic applications

Bandgap narrowing and polarization enhancement in (K,Na,Li)(Nb,Sb,Ta)O 3+ x% Fe 2O 3 lead-free ceramics for photovoltaic applications

Improved electrical properties in PZT/PZ thin films by adjusting annealing temperature

High Thermal Sensitivity Performance of Ferroelectric Vanadium Oxide Hybrid Process in Thermal Imaging Monitoring

Contact Info

Product

Resources

About

Bandgap narrowing and polarization enhancement in (K,Na,Li)(Nb,Sb,Ta)O ₃+ x% Fe ₂O ₃ lead-free ceramics for photovoltaic applications

Bandgap narrowing and polarization enhancement in (K,Na,Li)(Nb,Sb,Ta)O ₃+ x% Fe ₂O ₃ lead-free ceramics for photovoltaic applications