A facile process for soak-and-peel delamination of CVD graphene from substrates using water

Pc, Gupta; Dongare, Pratiksha D.; Grover, Sameer; Dubey, Sudipta; Mamgain, Hitesh; Bhattacharya, Arnab; Deshmukh, Mandar M.

doi:10.1038/srep03882

Cited by 80 publications

(62 citation statements)

References 47 publications

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“…[109] CVD-grown graphene films were transferred to a PET substrate by the penetration of hot deionized water between the hydrophobic graphene and a hydrophilic native oxide layer on the metal foil. [109,110] No polymer was used and water makes the transfer process clean, fast and low-cost, however the average sheet resistance of the undoped graphene TCF is around 5.2 kΩ sq -1 at 97.5% transparency, which is worse than the performance obtained by transfer methods using metal-etching.…”

Section: Graphene Transparent Conductive Filmsmentioning

confidence: 79%

“…[103][104][105] Several transfer methods that do not involve metal etching are promising for the environmentally friendly and economical transfer of graphene, such as electro-chemical bubbling [108] and water-assisted delamination. [109,110] On the other hand, TCFs based on multi-wall CNT TCFs have been commercialized for use in touch screens in cell phones; [61] however, their optoelectrical performance is not as good as that of single-wall CNTs. High-performance and uniform single-wall CNT TCFs can be produced using continuous synthesis by floating catalyst CVD [79] along with the gas-filtration technique.…”

Section: Conclusion and Future Prospectsmentioning

confidence: 99%

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All‐Carbon Thin‐Film Transistors as a Step Towards Flexible and Transparent Electronics

Sun

Liu

Ren

et al. 2016

Adv Elect Materials

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silicon wafer, TFTs can be fabricated on various types of rigid or flexible substrates. [1] TFTs fabricated on glass are primarily used for driving circuits in the liquid-crystal displays of televisions, computer monitors, and mobile phones, etc. Well-established TFT technologies based on amorphous silicon and polycrystalline silicon are well-suited for large-area, highresolution panels, e.g., six pieces of 65-and 75-inch TFT arrays can be fabricated on a 10.5th generation glass substrate. [2] However, TFTs based on these silicon-based semiconductors still face challenges in flexible and transparent applications, which would allow circuit integration on curved and non-rigid surfaces and in multi-layer packaging, e.g., head-up displays on windshields, informational displays on eyeglasses and transparent electronic skin in wearable electronics. [3] In terms of the materials used to construct flexible and transparent devices, not only the transistor channel but also the dielectric layers and metallic interconnects should have excellent flexibility and transparency. [4] The following factors play critical roles in the selection of channel materials: carrier mobility, temperature of material preparation, flexibility, large area availability, cost and stability. Carrier mobility is an important parameter to characterize the drift velocity of electrons or holes in a semiconductor under an applied electric field. [5] A high mobility corresponds to a high operating speed of the TFTs and their circuits. The only advantage of low-temperature polycrystalline silicon is its relatively high mobility. [6] Amorphous oxide semiconductors, including indium gallium zinc oxide, have a modest mobility and are costly due to the use of noble metal elements. [7] Hydrogenterminated amorphous silicon has modest properties in carrier mobility, large-area and flexibility, [1] and organic semiconductors are better suited for flexible and transparent TFTs except for their shortcomings of low mobility and poor environmental stability. [8] On the other hand, normal metal electrodes, such as gold, silver, aluminum and copper, cannot be used to form transparent electrodes due to their poor light transmittance. Both transparent indium tin oxide (ITO) electrodes and opaque metal electrodes suffer from flexibility constraints and can usually tolerate strains of less than 2%. [9][10][11] Therefore, the discovery of new types of robust channel and electrode materials is essential to achieve transparent, flexible, and even stretchable electronics. [12] Carbon nanomaterials, such as carbon nanotubes (CNTs) and graphene, have attracted great attention for potential use in flexible and transparent electronics since their discovery in the last two decades, [13,14] owing to their excellent properties Carbon nanotubes and graphene have attracted great attention for potential applications in flexible and transparent electronics, owing to their exceptional properties including very high electrical conductivity, optical transmittance, mechanical strength and f...

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Section: Graphene Transparent Conductive Filmsmentioning

confidence: 79%

Section: Conclusion and Future Prospectsmentioning

confidence: 99%

All‐Carbon Thin‐Film Transistors as a Step Towards Flexible and Transparent Electronics

Sun

Liu

Ren

et al. 2016

Adv Elect Materials

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“…This enables the release of the NbN film from the substrate, thus allowing flexible, free-standing NbN layers to be obtained. These can be transferred to any other substrate, thus providing a simple route for integration with photonic crystals and also an alternative to NbN grown on Si 3 Graphene layers were deposited by the standard process of CVD of carbon via the decomposition of methane onto copper foils, 17 specific details of our growth 18 and transfer 19 process can be found in earlier reports. Continuous graphene films with monolayer to few-layer coverage were obtained and transferred onto thermally oxidized silicon wafers with a 300 nm SiO 2 layer.…”

mentioning

confidence: 99%

Highly oriented, free-standing, superconducting NbN films growth on chemical vapor deposited graphene

Saraswat¹,

Pc²,

Bhattacharya³

et al. 2014

APL Materials

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NbN films are grown on chemical vapor deposited graphene using dc magnetron sputtering. The orientation and transition temperature of the deposited films is studied as a function of substrate temperature. A superconducting transition temperature of 14 K is obtained for highly oriented (111) films grown at substrate temperature of 150 °C, which is comparable to epitaxial films grown on MgO and sapphire substrates. These films show a considerably high upper critical field of ∼33 T. In addition, we demonstrate a process for obtaining flexible, free-standing NbN films by delaminating graphene from the substrate using a simple wet etching technique. These free-standing NbN layers can be transferred to any substrate, potentially enabling a range of novel superconducting thin-film applications.

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“…Hence, bottom-up methods are highly suitable for manufacturing electronic devices, such as transistors, for which a continuous graphene monolayer is required. However, a huge drawback of the bottom-up processes is their high production cost due to the need to process at 6001,650 °C , the need for inert and hydrogen gasatmospheres and expensive educt materials, and their inherent lack of scalability [18,19].…”

Section: Introductionmentioning

confidence: 99%

Determination of quantitative structure-property and structure-process relationships for graphene production in water

et al. 2015

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A scalable method for graphene and few-layer graphene (FLG) production by graphite delamination in aqueous solutions of the nonionic surfactant TWEEN ® 80 (TW80) using stirred-media mills is presented. Delaminated product analysis using statistical Raman spectroscopy yielded extensive processing-structure-property relationships that revealed how stress intensity and specific energy input, i.e., the process parameters, govern the yield of graphene production and defect formation. The dispersed carbon concentration increased but the content and the quality of the FLG product decreased sharply with higher specific energy input. The FLG content of the product was up to 90%, especially for low specific energy input. Moreover, Raman analyses revealed that stress intensities greater than about 1 nJ were related to significant defect formation in the product particles. Another key parameter for graphene production is solvent viscosity. The FLG concentration in the product increased by a factor of 10 when the solvent's viscosity was increased from 1 to 6 mPa·s because shear-and friction-induced delamination was enhanced and in-plane fracture was reduced due to dampening of bead motion. Based on the processing-structure-property relationships found, we propose that the delamination process can be designed in such way that the product consists, almost totally, of FLG and that single-layer graphene is produced. The scalability of graphene production by stirred-media delamination was demonstrated when an increase in the batch size from 0.2 to 2 L had no significant effect on product quality.

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A facile process for soak-and-peel delamination of CVD graphene from substrates using water

Cited by 80 publications

References 47 publications

All‐Carbon Thin‐Film Transistors as a Step Towards Flexible and Transparent Electronics

All‐Carbon Thin‐Film Transistors as a Step Towards Flexible and Transparent Electronics

Highly oriented, free-standing, superconducting NbN films growth on chemical vapor deposited graphene

Determination of quantitative structure-property and structure-process relationships for graphene production in water

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