2021
DOI: 10.1016/j.electacta.2021.138385
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A facile synthesis of phosphorus doped Si/SiO2/C with high coulombic efficiency and good stability as an anode material for lithium ion batteries

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Cited by 35 publications
(13 citation statements)
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“…The D Li + was calculated by the following equation: , where R is the gas constant (8.314 J K –1 mol –1 ), T is thermodynamic temperature (298.15 K), A is the working area of the electrode, n is the number of electrons in the state of charge, F is the Faraday constant (96,485 C mol –1 ), C is the Li + concentration in the delithiated state, and σ is the Warburg impedance coefficient. The σ can be obtained by equation …”
Section: Results and Discussionsupporting
confidence: 89%
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“…The D Li + was calculated by the following equation: , where R is the gas constant (8.314 J K –1 mol –1 ), T is thermodynamic temperature (298.15 K), A is the working area of the electrode, n is the number of electrons in the state of charge, F is the Faraday constant (96,485 C mol –1 ), C is the Li + concentration in the delithiated state, and σ is the Warburg impedance coefficient. The σ can be obtained by equation …”
Section: Results and Discussionsupporting
confidence: 89%
“…Figure e illustrates the linear fit of the Z ′ versus ω –1/2 plots related to the diffusion coefficient of Li + ( D Li + ) in the Warburg region (low-frequency region) of the EIS spectrum of the samples after 100 cycles. The D Li + was calculated by the following equation: , D normalL normali + = R 2 T 2 2 A 2 n 4 F 4 C normalL normali + 2 σ 2 where R is the gas constant (8.314 J K –1 mol –1 ), T is thermodynamic temperature (298.15 K), A is the working area of the electrode, n is the number of electrons in the state of charge, F is the Faraday constant (96,485 C mol –1 ), C is the Li + concentration in the delithiated state, and σ is the Warburg impedance coefficient. The σ can be obtained by equation Z = R normalS + R ct + σ ω 1 / 2 …”
Section: Results and Discussionmentioning
confidence: 99%
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“…Its application should therefore immediately be considered as a dopant in SiO x anodes. Chen et al 47 synthesized a phosphorus-doped Si/SiO 2 /C anode material comprising doped Si coated with carbon and silica layers, which was prepared by ball-milling flake Si particles with polyvinyl butyral and phosphoric acid as additives. Elemental analysis showed a homogeneous distribution of Si, O, P, and C on the surfaces of the obtained particles.…”
Section: Faster Ion Diffusion Ratementioning
confidence: 99%
“…Other doping atoms were tested for their performance in LIBs. Chen et al successfully prepared P-Doped Si/SiO 2 /C using polyethanol butyral (PVB) as a carbon source and phosphoric acid as a dopant [147]. The carbon layer produced by the PVB decomposition not only suppressed the volume expansion of silicon, but it also increased the surface conductivity.…”
Section: Derived Carbon Sourcementioning
confidence: 99%