2008 51st Midwest Symposium on Circuits and Systems 2008
DOI: 10.1109/mwscas.2008.4616857
|View full text |Cite
|
Sign up to set email alerts
|

A fast-response low-dropout regulator based on power-efficient low-voltage buffer

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
3
0

Year Published

2011
2011
2013
2013

Publication Types

Select...
4
1

Relationship

0
5

Authors

Journals

citations
Cited by 5 publications
(3 citation statements)
references
References 8 publications
0
3
0
Order By: Relevance
“…This also boosts the value of gm and furthermore reduces the output impedance of the buffer (ro,buf )according to (6). Since the unity-gain frequency of the LDO increases with the load current increasing according to (4), the decrease of the output impedance can be able to push the second pole p1 to the high frequency which could make the loop of the circuit more stable under the entire load current range.…”
Section: Stucture Of Ldo Linear Regulatormentioning
confidence: 99%
See 1 more Smart Citation
“…This also boosts the value of gm and furthermore reduces the output impedance of the buffer (ro,buf )according to (6). Since the unity-gain frequency of the LDO increases with the load current increasing according to (4), the decrease of the output impedance can be able to push the second pole p1 to the high frequency which could make the loop of the circuit more stable under the entire load current range.…”
Section: Stucture Of Ldo Linear Regulatormentioning
confidence: 99%
“…The loop gain characteristics of LDO are much more suffered from the variation of the load current, since the transconductance parameter and output impedance of pass transistor have a close relationship with the load current according to (4). In order to make sure the LDO be in stable operation, stability analysis is needed under different load condition.…”
Section: Design Of the Proposed Ldo Regulatormentioning
confidence: 99%
“…In our design, the bias circuitry includes M9-M14 transistors operating in the subthreshold region. M9 and M10 are reversely-biased diode-connected PMOS transistors, forming a pseudo resistive divider [5]. The bias voltage depends on the ratio between the size of M9 and M10, which can reduce the effect of process variations effectively.…”
Section: Introductionmentioning
confidence: 99%