2022
DOI: 10.1016/j.jallcom.2021.162087
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A feasible and low-cost green route to prepare ZnO with n or p-type conductivity by changing the parsley extract concentration

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Cited by 7 publications
(5 citation statements)
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“…Using the following relation between plane distances, we were able to derive the lattice parameters a and c for the ZnO hexagonal crystal structure. 48 sin 2…”
Section: Resultsmentioning
confidence: 99%
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“…Using the following relation between plane distances, we were able to derive the lattice parameters a and c for the ZnO hexagonal crystal structure. 48 sin 2…”
Section: Resultsmentioning
confidence: 99%
“…Using the following relation between plane distances, we were able to derive the lattice parameters a and c for the ZnO hexagonal crystal structure. 48 where ‘ θ ’ is the angle of diffraction; ‘ λ ’ is the wavelength; ‘ a ’ and ‘ c ’ are lattice constants; and ‘ h ’, ‘ k ’, and ‘ l ’ are miller indices.…”
Section: Resultsmentioning
confidence: 99%
“…Several approaches to achieve p-type conductivity have employed Li [18], N [19,20], Na [21], P [13], Mg [22], and configurations using N as a co-dopant [23][24][25] with success in a laboratory environment. However, p-type ZnO film is of low stability, and the results are difficult to reproduce on a large scale, given the absence of good rectification in the ZnO p-n homojunction [22,23,26,27].…”
Section: Introductionmentioning
confidence: 99%
“…Several approaches to achieve p-type conductivity have employed Li [18], N [19,20], Na [21], P [13], Mg [22], and configurations using N as a co-dopant [23][24][25] with success in a laboratory environment. However, p-type ZnO film is of low stability, and the results are difficult to reproduce on a large scale, given the absence of good rectification in the ZnO p-n homojunction [22,23,26,27]. Among these elements, first-principles calculations indicate that substitutional group I elements are shallow acceptors, with limitations associated with their compensating mechanisms [28,29].…”
Section: Introductionmentioning
confidence: 99%
“…Zinc oxide may be produced readily by oxidation. ZnO is an inorganic semiconductor material with three distinct crystal structures—wurtzite, zinc blende, and rock salt 23 , 24 . The structure of wurtzite, in which each zinc atom is tetrahedrally coupled with four oxygen atoms, is thermodynamically stable under ambient circumstances.…”
Section: Introductionmentioning
confidence: 99%