A Ferroelectric Capacitor (Fecap) Based Unreleased Resonator

He, Yanbo; Bahr, Bichoy; Weinstein, Dana

doi:10.31438/trf.hh2018.19

Cited by 3 publications

References 6 publications

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A tunable ferroelectric based unreleased RF resonator

Bahr

et al. 2020

Microsyst Nanoeng

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This paper introduces the first tunable ferroelectric capacitor (FeCAP)-based unreleased RF MEMS resonator, integrated seamlessly in Texas Instruments’ 130 nm Ferroelectric RAM (FeRAM) technology. The designs presented here are monolithically integrated in solid-state CMOS technology, with no post-processing or release step typical of other MEMS devices. An array of FeCAPs in this complementary metal-oxide-semiconductor (CMOS) technology’s back-end-of-line (BEOL) process were used to define the acoustic resonance cavity as well as the electromechanical transducers. To achieve high quality factor (Q) of the resonator, acoustic waveguiding for vertical confinement within the CMOS stack is studied and optimized. Additional design considerations are discussed to obtain lateral confinement and suppression of spurious modes. An FeCAP resonator is demonstrated with fundamental resonance at 703 MHz and Q of 1012. This gives a frequency-quality factor product $$f \cdot Q = 7.11 \times 10^{11}$$f⋅Q=7.11×1011 which is 1.6× higher than the most state-of-the-art Pb(Zr,Ti)O3 (PZT) resonators. Due to the ferroelectric characteristics of the FeCAPs, transduction of the resonator can be switched on and off by adjusting the electric polarization. In this case, the resonance can be turned off completely at ±0.3 V corresponding to the coercive voltage of the constituent FeCAP transducers. These novel switchable resonators may have promising applications in on-chip timing, ad-hoc radio front ends, and chip-scale sensors.

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A tunable ferroelectric based unreleased RF resonator

Bahr

et al. 2020

Microsyst Nanoeng

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Design and Applications of Integrated Transducers in Commercial CMOS Technology

Rawat¹,

Anderson²,

Weinstein³

2022

Front. Mech. Eng.

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Monolithic integration of Microelectromechanical Systems (MEMS) directly within CMOS technology offers enhanced functionality for integrated circuits (IC) and the potential improvement of system-level performance for MEMS devices in close proximity to biasing and sense circuits. While the bulk of CMOS-MEMS solutions involve post-processing of CMOS chips to define freely-suspended MEMS structures, there are key applications and conditions under which a solid, unreleased acoustic structure composed of the CMOS stack is preferred. Unreleased CMOS-MEMS devices benefit from lower barrier-to-entry with no post-processing of the CMOS chip, simplified packaging, robustness under acceleration and shock, stress gradient insensitivity, and opportunities for frequency scaling. This paper provides a review of advances in unreleased CMOS-MEMS devices over the past decade, with focus on dispersion engineering of guided waves in CMOS, acoustic confinement, CMOS-MEMS transducers, and large signal modeling. We discuss performance limits with standard capacitive transduction, with emphasis on performance boost with emerging CMOS materials including ferroelectrics under development for memory.

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