A FET-controlled thyristor in SIPMOS technology

Introduction

“…In Europe, a group at Siemens also pursued the development of MOS-gated thyristors [35,36]. The authors of this work cite the prior reports by Scharf and Plummer [28] and by Baliga [8] in their publications.…”

A new Insulated-Gate Thyristor structure with turn-off achieved by controlling the base-resistance

“…1. Note that unlike previously proposed structures where the P base region is lightly doped and is contacted through a non-MOS-gate-modulated resistor [2]- [4], in the new structure, the P base region is contacted only at the P+ square cells through a MOS gate modulated Pregion. This enables smaller cell dimensions and consequently, realization of a higher MOS channel density.…”

“…This concept has the advantages of low forward drop and ease of control. Examples of device structures that achieve this function are the MCT [ 11 and the BRT [2]- [4]. In these structures, a p-channel MOSFET is used to divert the thyristor current to a grounded P+ region to turn-off the thyristor.…”

Le transistor-thyristor métal-oxyde-semiconducteur (T2 MOS)

“…Un contact pris sur la face arrière de ce substrat constitue une nouvelle électrode appelée anode. Une configuration de thyristor vertical [8] est ainsi obtenue dans la structure multicouche constituée par le substrat P +, la couche épitaxiée N -, la diffusion P et la diffusion N +. Le déclenchement de ce thyristor est assuré par la mise en conduction du transistor MOS, situé entre les deux zones N, lorsqu'une couche inversée est générée au droit de l'interface silicium P-silice, quand la grille est rendue positive par rapport à la source.…”