protection during formation of sensor structures in silicon is presented in [5][6][7][8].The case of simultaneous formation of cavity and V-groove or the boss and V-groove in its middle requires special consideration due to complicated topology and the strong influence of the convex corners underetching. A case of formation of V-groove connected with square aperture in aqueous KOH was experimentally investigated in [6]. In this case, the only two convex corners required compensation. a) b) Fig. 1. Scheme of optomechanical sensor part: а) idealized shape of sensor's optomechanical part: 1 -silicon die; 2 -boss; 3 -V-grooves; 4 -U-groove; 5 -rigid frame, and b) layout mask of optomechanical part with corners compensators.Till recently, the formation of the boss with embedded V-groove for the optic fiber placement has not been investigated experimentally yet. Two main features should be considered for this structure formation by anisotropic etch: a) a rectangular boss with embedded V-groove has eight convex corners. All of these corners should have the Abstract -The results of experimental investigation of formation features of the 3D boss with embedded V-groove for the optic fiber, comprised in optomechanical part of MOEMS photovoltaic pressure sensor are presented. Dependences of ratio change of length of edges <110> and <410> forming underetching compensators of convex corners of the chip have been obtained. To provide good quality of the boss etch, the value of misalignment angle between the mask and silicon wafer primary flat has been defined to be less than 0.5 degrees.Index Terms -silicon photoelectrical pressure sensor, optical fiber, boss structure, V-groove, compensation structures, anisotropic etching in KOH