A field-effect WSe₂/Si heterojunction diode

Abstract

It is significant to develop a heterogeneous integration technology to promote the application of two dimensional (2D) materials in silicon roadmap. In this paper, we reported a field-effect WSe2/Si heterojunction diode based on ambipolar 2D WSe2 and silicon on insulator (SOI). Our results indicate that the device exhibits a p-n diode behavior with a rectifying ratio of ~300 and an ideality factor of 1.37. As a photodetector, it has optoelectronic properties with a response time of 0.13 ms, responsivity of 0.045 A/W, detectivity of 4.5 × 1010 Jones and external quantum efficiency (EQE) of 8.9 %. Due to the ambipolar behavior of the WSe2, the rectifying and optoelectronic properties of the heterojunction diode are of the ability to be modulated by the gate electrical field, enabling various potential applications such as logic optoelectronic devices and neuromorphic optoelectronic devices for in-sensor computing circuits. Thanks to the process based on the mature SOI technique, our field-effect heterojunction diode should have obvious advantages in device isolation and integration.

Recent progress on ambipolar 2D semiconductors in emergent reconfigurable electronics and optoelectronics

“…Graphene is a 2D material composed of carbon 128505-2 atoms, [56,57] which is the first widely studied ambipolar 2D material. So far, ambipolar behavior has been found in a variety of 2D materials, mainly in elemental materials and metal chalcogenide 2D semiconductors, [15] including elemental semiconductors like graphene, [57] phosphorene (BP), [58] silicene, [59] germanane, [60] tellurene, [61] and black arsenic; [62] metal disulfide 2D semiconductors like MoS 2 , [63,64] WS 2 , [65,66] ReS 2 , [67,68] and SnS 2 ; [69] metal diselenide 2D semiconductors like MoSe 2 , [70,71] WSe 2 , [72][73][74] ReSe 2 , [67] PtSe 2 , [75,76] and PdSe 2 ; [77][78][79] metal ditelluride 2D semiconductors like MoTe 2 , [80,81] and WTe 2 ; [82,83] ternary and other chalcogenide 2D semiconductors like Mo(Se 1−x Te x ) 2 , [84] W(Se 1−x Te x ) 2 , [85] SnSe, [86] SnS, [87] InSe, [88] InSb, [89] Cr 2 S 3 , [90] Nb 2 SiTe 4 , [91] and (Bi x Sb 1−x )Te 3 . [92] In addition to the aforementioned inorganic 2D materials, some organic 2D materials also exhibit similar properties.…”

Tunable electronic and optical properties of WSe2/Si2H heterojunction via electric field

“…According to the diverse relative positions of Valence Band Maximum (VBM) and Conduction Band Minimum (CBM) of the two diverse materials, three types of vdWheterojunctions are classified [25], namely Type-I, Type-II, and Type-III energy band arrangements. So far, different types of heterojunctions for different functions have been proposed and investigated [26][27][28][29][30][31][32].…”

A Dual Mode MoTe2/WS2/WSe2 Double Van der Waals Heterojunctions Phototransistor for Optical Imaging and Communication

“…[24] MoTe 2 /WS 2 single heterostructure with type-II band arrangement has been investigated in recent years, which has been proven to be applicable for broadband vision-infrared light detection and obtained good photoelectric performance at V ds = 1 V. [25] In particular, similar to 2H-MoTe 2 , tungsten disulfide (WSe 2 ) has a moderate indirect band gap of 1.2 eV in bulk with bipolar conductivity, the Fermi level (E f ) can be gate-modulated, which enables the effective operation of multiple mechanisms via an external electric field. [26,27] In this work, we designed a double vdW heterostructures phototransistor consisting of bottom multilayer WSe 2 , middle mul-tilayer WS 2 , and top multilayer MoTe 2 . The operating mode can be altered in such double heterostructure via the concrete V g and V ds to achieve the expected high performance with high R and fast response speed in a single device.…”