A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mΩ · cm2 on-resistance

Zeng, Ke; Vaidya, Abhishek; Singisetti, Uttam

doi:10.7567/1882-0786/ab2e86

Cited by 66 publications

(32 citation statements)

References 22 publications

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“…power transistors have been reported using β-Ga 2 O 3 active channel. [13][14][15][16][17] Most of the reported β-Ga 2 O 3 FETs are metal oxide semiconductor field effect transistors (MOSFETs) [13][14][15][16][17][18][19][20][21] and show very negative threshold voltages (V th ) while those of metal semiconductor field effect transistor (MESFETs) [1,[22][23][24][25][26] seem less negative in general. Hence, β-Ga 2 O 3 MESFETs could have their own advantages in the aspects of V th .…”

mentioning

confidence: 99%

High Performance β‐Ga₂O₃ Schottky Barrier Transistors with Large Work Function TMD Gate of NbS₂ and TaS₂

Kim

Jin

Choi

et al. 2021

Adv Funct Materials

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Gallium trioxide, β-Ga 2 O 3 , has been recently studied due to its promising semiconducting properties as active material in transistors or Schottky diodes. Transistors with β-Ga 2 O 3 channels are mostly metal oxide field effect transistors (MOSFET), and they show very negative threshold voltages (V th ) in general. Metal semiconductor field effect transistors (MESFETs) with top gate are also reported with less negative V th . Still, β-Ga 2 O 3 MESFETs are only a few. Here, bottom gate architecture β-Ga 2 O 3 MESFETs using transition metal dichalcogenide (TMD) NbS 2 and TaS 2 are reported. Due to the large work functions of those metallic TMDs, the MESFETs display minimum subthreshold swing of 61 mV dec −1 , small V th of −1.2 V, minimum OFF I D of ≈100 fA, and maximum ON/OFF current ratio of ≈10 8 . Both β-Ga 2 O 3 Schottky diodes with TaS 2 and NbS 2 display good junction stability even after 300 °C measurements in 10 mTorr vacuum. When the β-Ga 2 O 3 MESFET with TaS 2gate is integrated as a switching FET into an organic light emitting diode (OLED) circuit, it demonstrates long-term leakage endurance performance, maintaining an OLED brightness higher than 58% of the initial intensity after 100 s passes since the ON-switching point, which is even superior to the performance of conventional a-IGZO MOSFET switch.

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confidence: 99%

High Performance β‐Ga₂O₃ Schottky Barrier Transistors with Large Work Function TMD Gate of NbS₂ and TaS₂

Kim

Jin

Choi

et al. 2021

Adv Funct Materials

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“…β −Ga 2 O 3 is a promising wide-bandgap semiconductor material known for its potential applications in high voltage power electronics [1][2][3][4][5][6][7][8][9][10] and high power radio frequency (RF) switching [11][12][13][14] . The power electronics application comes from its large Baligas's figure of merit (BFoM = ε µE 3 c ) resulting from its wide bandgap (4.8 eV) [15][16][17][18] and a very high estimated breakdown field (E c = 8 MVcm −1 ) 19 .…”

Section: Introductionmentioning

confidence: 99%

Low field transport calculation of 2-dimensional electron gas in β-(AlxGa1−x)2O3/Ga2O3 heterostructures

Kumar

Ghosh

Singisetti

2020

Journal of Applied Physics

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β -Gallium Oxide (Ga 2 O 3 ) is an extensively investigated ultrawide-bandgap semiconductor for potential applications in power electronics and RF switching. The room temperature bulk electron mobility (∼200 cm 2 V −1 s −1 ) is comparatively low and is limited by the 30 phonon modes originating from its 10-atom primitive cell. The theoretically calculated saturation velocity is 1-2×10 7 cms −1 which is comparable to GaN. The high field electron transport in the 2DEG is explored in this work based on the first principles calculated parameters. A self-consistent calculation on a given heterostructure design gives the confined eigenfunctions and eigenenergies. The intrasubband and the intersubband scattering rates are calculated based on the Fermi's golden rule considering LO phonon-plasmon screening. The high field characteristics are extracted from the full-band Monte Carlo simulation of heterostructures at 300 K. The motion of electrons in the 2DEG and the bulk is treated through an integrated Monte Carlo program which outputs the steady state zone population, transient dynamics and the velocity-field curves for a few heterostructure designs. The critical field for saturation does not change significantly from bulk values, however an improved peak velocity is calculated at a higher 2DEG density. The velocity at low 2DEG densities is impacted by the antiscreening of LO phonons which plays an important role in shaping the zone population. A comparison with the experimental measurements is also carried out and possible origins of the discrepancies with experiments is discussed.

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“…The high temperature sputtering process therefore had a negative impact on both the channel sheet resistance and the ohmic contact resistance. shows the simulated electric field profile at the corner of the gate electrode along a cutline drawn through the high-k gate dielectric, (f) Benchmark plot comparing this result with previous 𝛽-Ga2O3 transistor reports 20,23,29,30,[37][38][39] .…”

Section: Device Characteristicsmentioning

confidence: 87%

Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors

Kalarickal

Feng

Bhuiyan

et al. 2021

IEEE Trans. Electron Devices

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The performance of ultra-wide band gap materials like 𝛽-Ga2O3 is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate dielectrics like BaTiO3 can provide an efficient field management strategy by improving the uniformity of electric field profile in the gate-drain region of lateral field effect transistors. Using this strategy, we were able to achieve high average breakdown fields of 1.5 MV/cm and 4 MV/cm at gate-drain spacing (𝐿 𝑔𝑑 ) of 6 𝜇m and 0.6 𝜇m respectively in 𝛽-Ga2O3, at a high channel sheet charge density of 1.8 × 10 13 cm -2 . The high sheet charge density together with high breakdown field enabled a record power figure of merit (𝑉 𝑏𝑟 2 /𝑅 𝑜𝑛 ) of 376 MW/cm 2 at a gate-drain spacing of 3 𝜇m.Low loss power switching devices were mostly based on Si until the introduction of wide band gap semiconductors like SiC (3.2 eV, Fbr=2.5 MV/cm) and GaN (3.4 eV, Fbr=3 MV/cm). The much larger breakdown field strength in these semiconductors offered the possibility of shrinking the active drift region thickness for the same breakdown voltage resulting in much lower on resistance (𝑅 𝑜𝑛 ). This improvement in the performance of power switching devices on breakdown field is well described by the power figure of merit 1 (BFOM-𝜖𝜇𝐹 𝑏𝑟 3 ), where 𝜖, 𝜇 and 𝐹 𝑏𝑟 represent dielectric permittivity, carrier mobility and breakdown field strength respectively.With a theoretical breakdown field strength (8 MV/cm) 2,3 much higher than GaN and SiC, 𝛽-Ga2O3 offers a new material platform for improving the performance metrics of such devices. In addition to the large breakdown field strength, the availability of bulk substrates grown from melt 4-7 makes 𝛽-Ga2O3 highly attractive since this

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A field-plated Ga₂O₃ MOSFET with near 2-kV breakdown voltage and 520 mΩ · cm² on-resistance

Cited by 66 publications

References 22 publications

High Performance β‐Ga₂O₃ Schottky Barrier Transistors with Large Work Function TMD Gate of NbS₂ and TaS₂

High Performance β‐Ga₂O₃ Schottky Barrier Transistors with Large Work Function TMD Gate of NbS₂ and TaS₂

Low field transport calculation of 2-dimensional electron gas in β-(AlxGa1−x)2O3/Ga2O3 heterostructures

Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors

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A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mΩ · cm2 on-resistance

Cited by 66 publications

References 22 publications

High Performance β‐Ga2O3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS2 and TaS2

High Performance β‐Ga2O3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS2 and TaS2

Low field transport calculation of 2-dimensional electron gas in β-(AlxGa1−x)2O3/Ga2O3 heterostructures

Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors

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A field-plated Ga₂O₃ MOSFET with near 2-kV breakdown voltage and 520 mΩ · cm² on-resistance

High Performance β‐Ga₂O₃ Schottky Barrier Transistors with Large Work Function TMD Gate of NbS₂ and TaS₂

High Performance β‐Ga₂O₃ Schottky Barrier Transistors with Large Work Function TMD Gate of NbS₂ and TaS₂