A FinFET-based low-power, stable 8T SRAM cell with high yield

Mani, Elangovan; Nimmagadda, Padmaja; Basha, Shaik Javid; El-Meligy, Mohammed A.; Mahmoud, Haitham A.

doi:10.1016/j.aeue.2023.155102

AEU - International Journal of Electronics and Communications

2024

DOI: 10.1016/j.aeue.2023.155102

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A FinFET-based low-power, stable 8T SRAM cell with high yield

Elangovan Mani,

Padmaja Nimmagadda,

Shaik Javid Basha

et al.

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2024

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Cited by 7 publications

References 46 publications

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A FinFET‐Based Low‐Power Static Random Access Memory Cell With Improved Stability

Rana,

Sachdeva,

Elangovan

et al. 2024

Int J Numerical Modelling

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This work presents a FinFET‐based stable, and low‐power consuming static random access memory (SRAM) bit‐cell that used eight transistors. The performance parameter of proposed feedback‐cutting 8T (FC8T) is compared with four pre‐published cell circuits, i.e., 6T, read‐decoupled 8T(8TRD), Schmitt‐trigger based 10T (10TST), and Schmitt‐trigger‐based modified 10 T (10TMST). The write power in proposed design is reduced by 1.36×/1.32×/1.88×/1.47× compared to 6T/8TRD/10TST/10TMST cells. The write and read stability of proposed design is improved by 1.15×/1.86×/1.28×/1.148× and 2.27×/1×/1.57×/1.11×, respectively. The proposed design also shows the low variability compared to other SRAM bit‐cells.

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A FinFET‐Based Low‐Power Static Random Access Memory Cell With Improved Stability

Rana,

Sachdeva,

Elangovan

et al. 2024

Int J Numerical Modelling

View full text Add to dashboard Cite

show abstract

A Variation-Tolerant, Stable, Low-Power 6T SRAM Cell in 32-nm CNTFET Technology

Mani,

Elbarbary,

El-Meligy

et al. 2024

Circuits Syst Signal Process

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Utilizing Forward Characteristics of Pocket Doped SiGe Tunnel FET for Designing LIF Neuron Model

Bashir,

Zahoor,

Alzahrani

2024

Silicon

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A FinFET-based low-power, stable 8T SRAM cell with high yield

Cited by 7 publications

References 46 publications

A FinFET‐Based Low‐Power Static Random Access Memory Cell With Improved Stability

A FinFET‐Based Low‐Power Static Random Access Memory Cell With Improved Stability

A Variation-Tolerant, Stable, Low-Power 6T SRAM Cell in 32-nm CNTFET Technology

Utilizing Forward Characteristics of Pocket Doped SiGe Tunnel FET for Designing LIF Neuron Model

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